Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

V. Darakchieva; P. P. Paskov; M. Schubert; T. Paskova; B. Monemar; S. Kamiyama; M. Iwaya; H. Amano; I. Akasaki

doi:10.1002/pssc.200303408

Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

V. Darakchieva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

We report on a study of the optical properties of undoped AlN/GaN superlattices by means of spectroscopic ellipsometry and photo- and cathodoluminescence. The effect of well and barrier thicknesses on the superlattice transition energies has been studied. Model calculations of the SL miniband structure are performed to compare theoretical predictions with the experimentally determined values of the transition energies.

Original language	English (US)
Pages (from-to)	2614-2617
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303408
State	Published - 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: May 25 2003 → May 30 2003

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200303408

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title = "Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy",

abstract = "We report on a study of the optical properties of undoped AlN/GaN superlattices by means of spectroscopic ellipsometry and photo- and cathodoluminescence. The effect of well and barrier thicknesses on the superlattice transition energies has been studied. Model calculations of the SL miniband structure are performed to compare theoretical predictions with the experimentally determined values of the transition energies.",

author = "V. Darakchieva and Paskov, {P. P.} and M. Schubert and T. Paskova and B. Monemar and S. Kamiyama and M. Iwaya and H. Amano and I. Akasaki",

year = "2003",

doi = "10.1002/pssc.200303408",

language = "English (US)",

pages = "2614--2617",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

AU - Darakchieva, V.

AU - Paskov, P. P.

AU - Schubert, M.

AU - Paskova, T.

AU - Monemar, B.

AU - Kamiyama, S.

AU - Iwaya, M.

AU - Amano, H.

AU - Akasaki, I.

PY - 2003

Y1 - 2003

N2 - We report on a study of the optical properties of undoped AlN/GaN superlattices by means of spectroscopic ellipsometry and photo- and cathodoluminescence. The effect of well and barrier thicknesses on the superlattice transition energies has been studied. Model calculations of the SL miniband structure are performed to compare theoretical predictions with the experimentally determined values of the transition energies.

AB - We report on a study of the optical properties of undoped AlN/GaN superlattices by means of spectroscopic ellipsometry and photo- and cathodoluminescence. The effect of well and barrier thicknesses on the superlattice transition energies has been studied. Model calculations of the SL miniband structure are performed to compare theoretical predictions with the experimentally determined values of the transition energies.

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UR - http://www.scopus.com/inward/citedby.url?scp=79953095451&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303408

DO - 10.1002/pssc.200303408

M3 - Conference article

AN - SCOPUS:79953095451

SN - 1610-1634

SP - 2614

EP - 2617

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

Abstract

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