Optical properties of ZnSe and Zn0.87Mn0.13Se epilayers determined by spectroscopic ellipsometry

J. Kvietkova; B. Daniel; M. Hetterich; M. Schubert; D. Spemann

doi:10.1016/j.tsf.2003.11.201

Optical properties of ZnSe and Zn_0.87Mn_0.13Se epilayers determined by spectroscopic ellipsometry

J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann

Research output: Contribution to journal › Conference article › peer-review

21 Scopus citations

Abstract

The semimagnetic ternary semiconductor material ZnMnSe is a suitable candidate for the use in optoelectronic devices either as a spin aligner or a waveguiding layer. In our work we are studying the optical properties of Zn _1-xMn_xSe layers grown on GaAs (001) substrates by molecular beam epitaxy. We present the complex dielectric function obtained by variable-angle spectroscopic ellipsometry in the photon energy range from 0.75 to 4.5 eV. Between 0.75 and 3.3 eV the experimental data are fitted with a critical-point parametric model. The energies of E₀, E ₀+Δ₀, E₁ and E ₁+Δ₁ critical points are given for ZnSe and Zn_0.87Mn_0.13Se.

Original language	English (US)
Pages (from-to)	228-230
Number of pages	3
Journal	Thin Solid Films
Volume	455-456
DOIs	https://doi.org/10.1016/j.tsf.2003.11.201
State	Published - May 1 2004
Externally published	Yes
Event	The 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria Duration: Jul 6 2003 → Jul 11 2003

Keywords

Critical points
Dielectric properties
ZnMnSe
ZnSe

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2003.11.201

Cite this

@article{67168f1d9d6d43b2a0bed52b5aa653f4,

title = "Optical properties of ZnSe and Zn0.87Mn0.13Se epilayers determined by spectroscopic ellipsometry",

abstract = "The semimagnetic ternary semiconductor material ZnMnSe is a suitable candidate for the use in optoelectronic devices either as a spin aligner or a waveguiding layer. In our work we are studying the optical properties of Zn 1-xMnxSe layers grown on GaAs (001) substrates by molecular beam epitaxy. We present the complex dielectric function obtained by variable-angle spectroscopic ellipsometry in the photon energy range from 0.75 to 4.5 eV. Between 0.75 and 3.3 eV the experimental data are fitted with a critical-point parametric model. The energies of E0, E 0+Δ0, E1 and E 1+Δ1 critical points are given for ZnSe and Zn0.87Mn0.13Se.",

keywords = "Critical points, Dielectric properties, ZnMnSe, ZnSe",

author = "J. Kvietkova and B. Daniel and M. Hetterich and M. Schubert and D. Spemann",

note = "Funding Information: This work was supported by the Center for Functional Nanostructures (CFN) of the Deutsche Forschungsgemeinschaft (DFG) within project A2.2.; The 3rd International Conference on Spectroscopic Ellipsometry ; Conference date: 06-07-2003 Through 11-07-2003",

year = "2004",

month = may,

day = "1",

doi = "10.1016/j.tsf.2003.11.201",

language = "English (US)",

volume = "455-456",

pages = "228--230",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Optical properties of ZnSe and Zn0.87Mn0.13Se epilayers determined by spectroscopic ellipsometry

AU - Kvietkova, J.

AU - Daniel, B.

AU - Hetterich, M.

AU - Schubert, M.

AU - Spemann, D.

N1 - Funding Information: This work was supported by the Center for Functional Nanostructures (CFN) of the Deutsche Forschungsgemeinschaft (DFG) within project A2.2.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The semimagnetic ternary semiconductor material ZnMnSe is a suitable candidate for the use in optoelectronic devices either as a spin aligner or a waveguiding layer. In our work we are studying the optical properties of Zn 1-xMnxSe layers grown on GaAs (001) substrates by molecular beam epitaxy. We present the complex dielectric function obtained by variable-angle spectroscopic ellipsometry in the photon energy range from 0.75 to 4.5 eV. Between 0.75 and 3.3 eV the experimental data are fitted with a critical-point parametric model. The energies of E0, E 0+Δ0, E1 and E 1+Δ1 critical points are given for ZnSe and Zn0.87Mn0.13Se.

AB - The semimagnetic ternary semiconductor material ZnMnSe is a suitable candidate for the use in optoelectronic devices either as a spin aligner or a waveguiding layer. In our work we are studying the optical properties of Zn 1-xMnxSe layers grown on GaAs (001) substrates by molecular beam epitaxy. We present the complex dielectric function obtained by variable-angle spectroscopic ellipsometry in the photon energy range from 0.75 to 4.5 eV. Between 0.75 and 3.3 eV the experimental data are fitted with a critical-point parametric model. The energies of E0, E 0+Δ0, E1 and E 1+Δ1 critical points are given for ZnSe and Zn0.87Mn0.13Se.

KW - Critical points

KW - Dielectric properties

KW - ZnMnSe

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=17144470497&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144470497&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.201

DO - 10.1016/j.tsf.2003.11.201

M3 - Conference article

AN - SCOPUS:17144470497

SN - 0040-6090

VL - 455-456

SP - 228

EP - 230

JO - Thin Solid Films

JF - Thin Solid Films

T2 - The 3rd International Conference on Spectroscopic Ellipsometry

Y2 - 6 July 2003 through 11 July 2003

ER -