Optical properties of ZnSe and Zn0.87Mn0.13Se epilayers determined by spectroscopic ellipsometry

J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann

Research output: Contribution to journalConference article

20 Scopus citations

Abstract

The semimagnetic ternary semiconductor material ZnMnSe is a suitable candidate for the use in optoelectronic devices either as a spin aligner or a waveguiding layer. In our work we are studying the optical properties of Zn 1-xMnxSe layers grown on GaAs (001) substrates by molecular beam epitaxy. We present the complex dielectric function obtained by variable-angle spectroscopic ellipsometry in the photon energy range from 0.75 to 4.5 eV. Between 0.75 and 3.3 eV the experimental data are fitted with a critical-point parametric model. The energies of E0, E 00, E1 and E 11 critical points are given for ZnSe and Zn0.87Mn0.13Se.

Original languageEnglish (US)
Pages (from-to)228-230
Number of pages3
JournalThin Solid Films
Volume455-456
DOIs
StatePublished - May 1 2004
EventThe 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria
Duration: Jul 6 2003Jul 11 2003

Keywords

  • Critical points
  • Dielectric properties
  • ZnMnSe
  • ZnSe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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