Optical waveguiding in an epitaxial layer of silicon-germanium grown on silicon

Richard A. Soref, Joseph P. Lorenzo, Fereydoon Namavar

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm thick, single-crystal layer of Ge0.1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.

Original languageEnglish (US)
Pages (from-to)175-184
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1177
DOIs
StatePublished - Jan 5 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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