Optical waveguiding in an epitaxial layer of silicon-germanium grown on silicon

Richard A. Soref; Joseph P. Lorenzo; Fereydoon Namavar

doi:10.1117/12.963332

Optical waveguiding in an epitaxial layer of silicon-germanium grown on silicon

Richard A. Soref, Joseph P. Lorenzo, Fereydoon Namavar

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm thick, single-crystal layer of Ge0.1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.

Original language	English (US)
Pages (from-to)	175-184
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1177
DOIs	https://doi.org/10.1117/12.963332
State	Published - Jan 5 1990
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Optical waveguiding in an epitaxial layer of silicon-germanium grown on silicon",

abstract = "Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm thick, single-crystal layer of Ge0.1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.",

author = "Soref, {Richard A.} and Lorenzo, {Joseph P.} and Fereydoon Namavar",

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AU - Soref, Richard A.

AU - Lorenzo, Joseph P.

AU - Namavar, Fereydoon

PY - 1990/1/5

Y1 - 1990/1/5

N2 - Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm thick, single-crystal layer of Ge0.1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.

AB - Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm thick, single-crystal layer of Ge0.1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

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Optical waveguiding in an epitaxial layer of silicon-germanium grown on silicon

Abstract

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