Optical waveguiding in Si/Si1-xGex/Si heterostructures

F. Namavar; R. A. Soref

doi:10.1063/1.349276

Optical waveguiding in Si/Si_1-xGe_x/Si heterostructures

F. Namavar, R. A. Soref

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Waveguiding at 1.3 μm has been observed in a submicrometer strained layer of Si_1-xGe_x sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si _1-xGe_x/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was ∼1500 Å thick beneath a 2-μm Si cap. The observed TE₀ mode profile agreed with theory.

Original language	English (US)
Pages (from-to)	3370-3372
Number of pages	3
Journal	Journal of Applied Physics
Volume	70
Issue number	6
DOIs	https://doi.org/10.1063/1.349276
State	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{c95979ac755449db8cc1d36c845d0a06,

title = "Optical waveguiding in Si/Si1-xGex/Si heterostructures",

abstract = "Waveguiding at 1.3 μm has been observed in a submicrometer strained layer of Si1-xGex sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si 1-xGex/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was ∼1500 {\AA} thick beneath a 2-μm Si cap. The observed TE0 mode profile agreed with theory.",

author = "F. Namavar and Soref, {R. A.}",

year = "1991",

doi = "10.1063/1.349276",

language = "English (US)",

volume = "70",

pages = "3370--3372",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Optical waveguiding in Si/Si1-xGex/Si heterostructures

AU - Namavar, F.

AU - Soref, R. A.

PY - 1991

Y1 - 1991

N2 - Waveguiding at 1.3 μm has been observed in a submicrometer strained layer of Si1-xGex sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si 1-xGex/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was ∼1500 Å thick beneath a 2-μm Si cap. The observed TE0 mode profile agreed with theory.

AB - Waveguiding at 1.3 μm has been observed in a submicrometer strained layer of Si1-xGex sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si 1-xGex/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was ∼1500 Å thick beneath a 2-μm Si cap. The observed TE0 mode profile agreed with theory.

UR - http://www.scopus.com/inward/record.url?scp=0001486176&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001486176&partnerID=8YFLogxK

U2 - 10.1063/1.349276

DO - 10.1063/1.349276

M3 - Article

AN - SCOPUS:0001486176

SN - 0021-8979

VL - 70

SP - 3370

EP - 3372

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Optical waveguiding in Si/Si_1-xGe_x/Si heterostructures

Abstract

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