Optical waveguiding in Si/Si1-xGex/Si heterostructures

F. Namavar, R. A. Soref

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Waveguiding at 1.3 μm has been observed in a submicrometer strained layer of Si1-xGex sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si 1-xGex/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was ∼1500 Å thick beneath a 2-μm Si cap. The observed TE0 mode profile agreed with theory.

Original languageEnglish (US)
Pages (from-to)3370-3372
Number of pages3
JournalJournal of Applied Physics
Issue number6
StatePublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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