Optoelectrical Molybdenum Disulfide (MoS2) - Ferroelectric Memories

Alexey Lipatov, Pankaj Sharma, Alexei Gruverman, Alexander Sinitskii

Research output: Contribution to journalArticle

98 Scopus citations

Abstract

In this study, we fabricated and tested electronic and memory properties of field-effect transistors (FETs) based on monolayer or few-layer molybdenum disulfide (MoS2) on a lead zirconium titanate (Pb(Zr,Ti)O3, PZT) substrate that was used as a gate dielectric. MoS2-PZT FETs exhibit a large hysteresis of electronic transport with high ON/OFF ratios. We demonstrate that the interplay of polarization and interfacial phenomena strongly affects the electronic behavior and memory characteristics of MoS2-PZT FETs. We further demonstrate that MoS2-PZT memories have a number of advantages and unique features compared to their graphene-based counterparts as well as commercial ferroelectric random-access memories (FeRAMs), such as nondestructive data readout, low operation voltage, wide memory window and the possibility to write and erase them both electrically and optically. This dual optoelectrical operation of these memories can simplify the device architecture and offer additional practical functionalities, such as an instant optical erase of large data arrays that is unavailable for many conventional memories (Figure Presented).

Original languageEnglish (US)
Pages (from-to)8089-8098
Number of pages10
JournalACS Nano
Volume9
Issue number8
DOIs
StatePublished - Aug 25 2015

Keywords

  • ferroelectric memory
  • field-effect transistor
  • hysteresis
  • lead zirconium titanate
  • molybdenum disulfide

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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