Ordered arrays of silicon pillars with controlled height and aspect ratio

Alexander Sinitskii; Stefan Neumeier; Jürgen Nelles; Monika Fischler; Ulrich Simon

doi:10.1088/0957-4484/18/30/305307

Ordered arrays of silicon pillars with controlled height and aspect ratio

Alexander Sinitskii, Stefan Neumeier, Jürgen Nelles, Monika Fischler, Ulrich Simon

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We report the fabrication of ordered arrays of silicon pillars via a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). For NSL we used monolayers of silica particles self-assembled onto silicon substrates as masks for the deposition of hexagonal arrays of chromium nanoislands. By changing the amount of the deposited metal we fabricated arrays of nanoislands with different size and spacing. By using these arrays as masks for RIE, silicon pillars with different height (up to 1100 nm) and aspect ratio (up to 12:1) could be obtained.

Original language	English (US)
Article number	305307
Journal	Nanotechnology
Volume	18
Issue number	30
DOIs	https://doi.org/10.1088/0957-4484/18/30/305307
State	Published - Aug 8 2007
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/18/30/305307

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AU - Sinitskii, Alexander

AU - Neumeier, Stefan

AU - Nelles, Jürgen

AU - Fischler, Monika

AU - Simon, Ulrich

PY - 2007/8/8

Y1 - 2007/8/8

N2 - We report the fabrication of ordered arrays of silicon pillars via a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). For NSL we used monolayers of silica particles self-assembled onto silicon substrates as masks for the deposition of hexagonal arrays of chromium nanoislands. By changing the amount of the deposited metal we fabricated arrays of nanoislands with different size and spacing. By using these arrays as masks for RIE, silicon pillars with different height (up to 1100 nm) and aspect ratio (up to 12:1) could be obtained.

AB - We report the fabrication of ordered arrays of silicon pillars via a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). For NSL we used monolayers of silica particles self-assembled onto silicon substrates as masks for the deposition of hexagonal arrays of chromium nanoislands. By changing the amount of the deposited metal we fabricated arrays of nanoislands with different size and spacing. By using these arrays as masks for RIE, silicon pillars with different height (up to 1100 nm) and aspect ratio (up to 12:1) could be obtained.

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Ordered arrays of silicon pillars with controlled height and aspect ratio

Abstract

ASJC Scopus subject areas

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