Oxide-based dilute ferromagnetic semiconductors: ZnMnO and Co:TiO 2

A. K. Pradhan; D. Hunter; B. Lasley-Hunter; J. B. Dadson; Kai Zhang; R. R. Rakhimov; Jun Zhang; D. J. Sellmyer

doi:10.1063/1.2165919

Oxide-based dilute ferromagnetic semiconductors: ZnMnO and Co:TiO ₂

A. K. Pradhan, D. Hunter, B. Lasley-Hunter, J. B. Dadson, Kai Zhang, R. R. Rakhimov, Jun Zhang, D. J. Sellmyer

Physics and Astronomy

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Abstract

We report on ferromagnetic properties of ZnMnO and Co:Ti O2 films grown by pulsed laser deposition with varying growth conditions. We have demonstrated that ZnMnO films show ferromagnetic properties at room temperature. However, oxygen plays a dominant role in the occurrence of ferromagnetism. Introducing carriers into ZnMnO films did not improve the ferromagnetic properties. Our experimental results indicate that the mechanism for ferromagnetism lies, probably, within the perspective of charge transfer between Mn ions through oxygen. On the other hand, our experimental results suggest that the ferromagnetism in Co:Ti O2 films is controlled by the presence of small metal Co2+ clusters in the rutile Ti O2 matrix, which are mainly present at the interface and on the surface of the films.

Original language	English (US)
Article number	08M108
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2165919
State	Published - 2006

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2165919

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@article{378854a202db4a73a144e2f9fa080a63,

title = "Oxide-based dilute ferromagnetic semiconductors: ZnMnO and Co:TiO 2",

abstract = "We report on ferromagnetic properties of ZnMnO and Co:Ti O2 films grown by pulsed laser deposition with varying growth conditions. We have demonstrated that ZnMnO films show ferromagnetic properties at room temperature. However, oxygen plays a dominant role in the occurrence of ferromagnetism. Introducing carriers into ZnMnO films did not improve the ferromagnetic properties. Our experimental results indicate that the mechanism for ferromagnetism lies, probably, within the perspective of charge transfer between Mn ions through oxygen. On the other hand, our experimental results suggest that the ferromagnetism in Co:Ti O2 films is controlled by the presence of small metal Co2+ clusters in the rutile Ti O2 matrix, which are mainly present at the interface and on the surface of the films.",

author = "Pradhan, {A. K.} and D. Hunter and B. Lasley-Hunter and Dadson, {J. B.} and Kai Zhang and Rakhimov, {R. R.} and Jun Zhang and Sellmyer, {D. J.}",

note = "Funding Information: This work is supported by the NASA and NSF. Research at the University of Nebraska is supported by NSF-MRSEC, ONR, and CMRA.",

year = "2006",

doi = "10.1063/1.2165919",

language = "English (US)",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Oxide-based dilute ferromagnetic semiconductors

T2 - ZnMnO and Co:TiO 2

AU - Pradhan, A. K.

AU - Hunter, D.

AU - Lasley-Hunter, B.

AU - Dadson, J. B.

AU - Zhang, Kai

AU - Rakhimov, R. R.

AU - Zhang, Jun

AU - Sellmyer, D. J.

N1 - Funding Information: This work is supported by the NASA and NSF. Research at the University of Nebraska is supported by NSF-MRSEC, ONR, and CMRA.

PY - 2006

Y1 - 2006

N2 - We report on ferromagnetic properties of ZnMnO and Co:Ti O2 films grown by pulsed laser deposition with varying growth conditions. We have demonstrated that ZnMnO films show ferromagnetic properties at room temperature. However, oxygen plays a dominant role in the occurrence of ferromagnetism. Introducing carriers into ZnMnO films did not improve the ferromagnetic properties. Our experimental results indicate that the mechanism for ferromagnetism lies, probably, within the perspective of charge transfer between Mn ions through oxygen. On the other hand, our experimental results suggest that the ferromagnetism in Co:Ti O2 films is controlled by the presence of small metal Co2+ clusters in the rutile Ti O2 matrix, which are mainly present at the interface and on the surface of the films.

AB - We report on ferromagnetic properties of ZnMnO and Co:Ti O2 films grown by pulsed laser deposition with varying growth conditions. We have demonstrated that ZnMnO films show ferromagnetic properties at room temperature. However, oxygen plays a dominant role in the occurrence of ferromagnetism. Introducing carriers into ZnMnO films did not improve the ferromagnetic properties. Our experimental results indicate that the mechanism for ferromagnetism lies, probably, within the perspective of charge transfer between Mn ions through oxygen. On the other hand, our experimental results suggest that the ferromagnetism in Co:Ti O2 films is controlled by the presence of small metal Co2+ clusters in the rutile Ti O2 matrix, which are mainly present at the interface and on the surface of the films.

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ER -

Oxide-based dilute ferromagnetic semiconductors: ZnMnO and Co:TiO ₂

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