Oxide-based dilute ferromagnetic semiconductors: ZnMnO and Co:TiO 2

A. K. Pradhan, D. Hunter, B. Lasley-Hunter, J. B. Dadson, Kai Zhang, R. R. Rakhimov, Jun Zhang, D. J. Sellmyer

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8 Scopus citations

Abstract

We report on ferromagnetic properties of ZnMnO and Co:Ti O2 films grown by pulsed laser deposition with varying growth conditions. We have demonstrated that ZnMnO films show ferromagnetic properties at room temperature. However, oxygen plays a dominant role in the occurrence of ferromagnetism. Introducing carriers into ZnMnO films did not improve the ferromagnetic properties. Our experimental results indicate that the mechanism for ferromagnetism lies, probably, within the perspective of charge transfer between Mn ions through oxygen. On the other hand, our experimental results suggest that the ferromagnetism in Co:Ti O2 films is controlled by the presence of small metal Co2+ clusters in the rutile Ti O2 matrix, which are mainly present at the interface and on the surface of the films.

Original languageEnglish (US)
Article number08M108
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Pradhan, A. K., Hunter, D., Lasley-Hunter, B., Dadson, J. B., Zhang, K., Rakhimov, R. R., Zhang, J., & Sellmyer, D. J. (2006). Oxide-based dilute ferromagnetic semiconductors: ZnMnO and Co:TiO 2. Journal of Applied Physics, 99(8), [08M108]. https://doi.org/10.1063/1.2165919