Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

X. Y. Chen; Y. F. Lu; B. J. Cho; Y. P. Zeng; J. N. Zeng; Y. H. Wu

doi:10.1063/1.1496141

Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

X. Y. Chen, Y. F. Lu, B. J. Cho, Y. P. Zeng, J. N. Zeng, Y. H. Wu

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects.

Original language	English (US)
Pages (from-to)	1344-1346
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	7
DOIs	https://doi.org/10.1063/1.1496141
State	Published - Aug 12 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1496141

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abstract = "Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects.",

author = "Chen, {X. Y.} and Lu, {Y. F.} and Cho, {B. J.} and Zeng, {Y. P.} and Zeng, {J. N.} and Wu, {Y. H.}",

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AU - Chen, X. Y.

AU - Lu, Y. F.

AU - Cho, B. J.

AU - Zeng, Y. P.

AU - Zeng, J. N.

AU - Wu, Y. H.

PY - 2002/8/12

Y1 - 2002/8/12

N2 - Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects.

AB - Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects.

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Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

Abstract

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