Phonon modes of GaNyP1-y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry

G. Leibiger; V. Gottschalch; A. Kasic; M. Schubert

doi:10.1063/1.1419050

Phonon modes of GaN_yP_1-y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, A. Kasic, M. Schubert

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaN_yP_1-y for nitrogen compositions 0.006≤y≤0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse-and longitudinal-optical phonon frequencies of the GaP-and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaN_yP_1-y.

Original language	English (US)
Pages (from-to)	3407-3409
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	21
DOIs	https://doi.org/10.1063/1.1419050
State	Published - Nov 19 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Phonon modes of GaNyP1-y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry",

abstract = "Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaNyP1-y for nitrogen compositions 0.006≤y≤0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse-and longitudinal-optical phonon frequencies of the GaP-and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaNyP1-y.",

author = "G. Leibiger and V. Gottschalch and A. Kasic and M. Schubert",

year = "2001",

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doi = "10.1063/1.1419050",

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T1 - Phonon modes of GaNyP1-y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry

AU - Leibiger, G.

AU - Gottschalch, V.

AU - Kasic, A.

AU - Schubert, M.

PY - 2001/11/19

Y1 - 2001/11/19

N2 - Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaNyP1-y for nitrogen compositions 0.006≤y≤0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse-and longitudinal-optical phonon frequencies of the GaP-and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaNyP1-y.

AB - Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaNyP1-y for nitrogen compositions 0.006≤y≤0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse-and longitudinal-optical phonon frequencies of the GaP-and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaNyP1-y.

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ER -

Phonon modes of GaN_yP_1-y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry

Abstract

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