Abstract
This work presents a spectroscopic ellipsometry study of phonon and polariton modes in zincblende group-III-group-V semiconductor layer structures. Contributions to the dielectric function due to infrared-active polar phonon modes and coupled longitudinal-phonon-plasmon modes are differentiated and quantified upon model lineshape analysis. Interface Fano-, Brewster- and surface-guided modes are assigned upon solution of the surface polariton dispersion relation for layered structures, and addressed by experiment. We explain the physical origin of the Berreman-effect.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 210-222 |
| Number of pages | 13 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5218 |
| DOIs | |
| State | Published - 2003 |
| Externally published | Yes |
| Event | PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Complex Mediums IV: Beyond Linear Isotropic Dielectrics - San Diego, CA, United States Duration: Aug 4 2003 → Aug 5 2003 |
Keywords
- Ellipsometry
- Infrared
- Interface
- Layered mediums
- Polariton
- Semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering