TY - GEN
T1 - Photoelectron spectroscopy characterization and computational modeling of gadolinium nitride thin films synthesized by chemical vapor deposition
AU - Gernhart, Zane C.
AU - Santana, Juan A.Colón
AU - Wang, Lu
AU - Mei, Wai Ning
AU - Cheung, Chin Li
N1 - Publisher Copyright:
© 2015 Materials Research Society.
PY - 2015
Y1 - 2015
N2 - Here we report our study of the electronic properties of [100]-textured gadolinium nitride (GdN) thin films synthesized using a chemical vapor deposition (CVD) method. The electronic properties of the films were investigated using photoemission and inverse photoemission spectroscopy coupled with computational modeling. Our density functional theory (DFT) calculations suggest that the theoretically predicted half-metallic electronic structure of GdN is likely due to its low density of states (DOS) at the Fermi level. These calculations are supported by our photoemission and inverse photoemission spectroscopic measurements which show a band gap for the prepared films of a few milli-electron volts, seemingly consistent with the predicted electronic structure. Additionally, the use of a CVD gallium nitride capping layer was found to decelerate the surface oxidation of our GdN samples.
AB - Here we report our study of the electronic properties of [100]-textured gadolinium nitride (GdN) thin films synthesized using a chemical vapor deposition (CVD) method. The electronic properties of the films were investigated using photoemission and inverse photoemission spectroscopy coupled with computational modeling. Our density functional theory (DFT) calculations suggest that the theoretically predicted half-metallic electronic structure of GdN is likely due to its low density of states (DOS) at the Fermi level. These calculations are supported by our photoemission and inverse photoemission spectroscopic measurements which show a band gap for the prepared films of a few milli-electron volts, seemingly consistent with the predicted electronic structure. Additionally, the use of a CVD gallium nitride capping layer was found to decelerate the surface oxidation of our GdN samples.
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U2 - 10.1557/opl.2015.193
DO - 10.1557/opl.2015.193
M3 - Conference contribution
AN - SCOPUS:84964687955
T3 - Materials Research Society Symposium Proceedings
SP - 131
EP - 136
BT - Materials and Technology for Nonvolatile Memories
A2 - Hu, Guohan
A2 - Tokumitsu, Eisuke
A2 - Fujisaki, Yoshihisa
A2 - Dimitrakis, Panagiotis
PB - Materials Research Society
T2 - 2014 MRS Fall Meeting
Y2 - 30 November 2014 through 5 December 2014
ER -