Photoelectron spectroscopy characterization and computational modeling of gadolinium nitride thin films synthesized by chemical vapor deposition

Zane C. Gernhart, Juan A.Colón Santana, Lu Wang, Wai Ning Mei, Chin Li Cheung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Here we report our study of the electronic properties of [100]-textured gadolinium nitride (GdN) thin films synthesized using a chemical vapor deposition (CVD) method. The electronic properties of the films were investigated using photoemission and inverse photoemission spectroscopy coupled with computational modeling. Our density functional theory (DFT) calculations suggest that the theoretically predicted half-metallic electronic structure of GdN is likely due to its low density of states (DOS) at the Fermi level. These calculations are supported by our photoemission and inverse photoemission spectroscopic measurements which show a band gap for the prepared films of a few milli-electron volts, seemingly consistent with the predicted electronic structure. Additionally, the use of a CVD gallium nitride capping layer was found to decelerate the surface oxidation of our GdN samples.

Original languageEnglish (US)
Title of host publicationMaterials and Technology for Nonvolatile Memories
EditorsGuohan Hu, Eisuke Tokumitsu, Yoshihisa Fujisaki, Panagiotis Dimitrakis
PublisherMaterials Research Society
Pages131-136
Number of pages6
ISBN (Electronic)9781605117065
DOIs
StatePublished - 2015
Event2014 MRS Fall Meeting - Boston, United States
Duration: Nov 30 2014Dec 5 2014

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1729
ISSN (Print)0272-9172

Other

Other2014 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston
Period11/30/1412/5/14

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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