Photoellipsometry: a modulation spectroscopy method applied to n-type GaAs

Yi Ming Xiong, Paul G. Snyder, John A Woollam

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Photoellipsometry combines the structural sensitivity of spectroscopic ellipsometry with the built-in electric field sensitivity of photoreflectance, by measuring both the pseudodielectric function and the photomodulated pseudodielectric function. This allows simultaneous characterization of the built-in fields, and the structural parameters such as heterostructure layer thicknesses on which the fields partly depend. Results for bulk n-type GaAs are presented here. Lineshape analysis, similar to that for photoreflectance, yields the surface field and depletion width. The Schottky barrier height is also determined by analysis of the dependence on the pump beam intensity.

Original languageEnglish (US)
Pages (from-to)399-401
Number of pages3
JournalThin Solid Films
Volume234
Issue number1-2
DOIs
StatePublished - Oct 25 1993

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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