Abstract
Photoellipsometry combines the structural sensitivity of spectroscopic ellipsometry with the built-in electric field sensitivity of photoreflectance, by measuring both the pseudodielectric function and the photomodulated pseudodielectric function. This allows simultaneous characterization of the built-in fields, and the structural parameters such as heterostructure layer thicknesses on which the fields partly depend. Results for bulk n-type GaAs are presented here. Lineshape analysis, similar to that for photoreflectance, yields the surface field and depletion width. The Schottky barrier height is also determined by analysis of the dependence on the pump beam intensity.
Original language | English (US) |
---|---|
Pages (from-to) | 399-401 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 234 |
Issue number | 1-2 |
DOIs | |
State | Published - Oct 25 1993 |
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces