Photoluminescence from thin porous films of silicon carbide

V. P. Parkhutik, F. Namavar, E. Andrade

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200-600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages. Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight depletion in carbon. Their photoluminescence peaks at 810 nm and achieves maximum intensity at 150-200K. The luminescence mechanism is thought to be due to Si nanoparticles crystallized in the SiC matrix during the anodization process.

Original languageEnglish (US)
Pages (from-to)229-232
Number of pages4
JournalThin Solid Films
Volume297
Issue number1-2
DOIs
StatePublished - Apr 1 1997

Keywords

  • Anodization
  • Photoluminescence
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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