Abstract
Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200-600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages. Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight depletion in carbon. Their photoluminescence peaks at 810 nm and achieves maximum intensity at 150-200K. The luminescence mechanism is thought to be due to Si nanoparticles crystallized in the SiC matrix during the anodization process.
Original language | English (US) |
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Pages (from-to) | 229-232 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 297 |
Issue number | 1-2 |
DOIs | |
State | Published - Apr 1 1997 |
Keywords
- Anodization
- Photoluminescence
- Silicon carbide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry