Photoluminescence properties of Er-doped porous silicon

U. Hommerich; X. Wu; F. Namavar; A. M. Cremins-Costa; K. L. Bray

Photoluminescence properties of Er-doped porous silicon

U. Hommerich, X. Wu, F. Namavar, A. M. Cremins-Costa, K. L. Bray

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Abstract

We present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×10¹⁵ Er/cm² at 380 keV and annealed at 650 °C for 30 minutes. Room-temperature 1.54 μm Er³⁺ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er³⁺ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er³⁺ luminescence.

Original language	English (US)
Pages (from-to)	215-220
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	405
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{679d00899653408299390c476494a2a1,

title = "Photoluminescence properties of Er-doped porous silicon",

abstract = "We present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650 °C for 30 minutes. Room-temperature 1.54 μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.",

author = "U. Hommerich and X. Wu and F. Namavar and Cremins-Costa, {A. M.} and Bray, {K. L.}",

year = "1996",

language = "English (US)",

volume = "405",

pages = "215--220",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - JOUR

T1 - Photoluminescence properties of Er-doped porous silicon

AU - Hommerich, U.

AU - Wu, X.

AU - Namavar, F.

AU - Cremins-Costa, A. M.

AU - Bray, K. L.

PY - 1996

Y1 - 1996

N2 - We present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650 °C for 30 minutes. Room-temperature 1.54 μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.

AB - We present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650 °C for 30 minutes. Room-temperature 1.54 μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.

UR - http://www.scopus.com/inward/record.url?scp=0029726980&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029726980&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029726980

SN - 0272-9172

VL - 405

SP - 215

EP - 220

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Photoluminescence properties of Er-doped porous silicon

Abstract

ASJC Scopus subject areas

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