Photoluminescence spectra from porous silicon (111) microstructures: Temperature and magnetic-field effects

Clive H. Perry, Feng Lu, Fereydoon Namavar, Nader M. Kalkhoran, Richard A. Soref

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

Visible and near-infrared (IR) photoluminescence emission spectra (0.9-3.0 eV) from p-type porous Si(111) microstructures are reported as a function of temperature and magnetic field. The visible peak located at 1.84 eV at 4 K shifted to ∼1.56 eV at 575 K where it disappeared; the intensity reached a maximum value at ∼150 K. The photoluminescence spectrum showed no measurable shift in the peak position with magnetic field from 0 to 15 T. Strong IR intrinsic band-to-band emission above and below the bulk silicon band gap at ∼1.09 eV at 300 K was observed. This luminescence was found to be enhanced by two orders of magnitude or more over the IR spectrum from an unanodized wafer.

Original languageEnglish (US)
Pages (from-to)3117-3119
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number25
DOIs
StatePublished - 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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