TY - JOUR
T1 - Photovoltaic Diode Effect Induced by Positive Bias Poling of Organic Layer-Mediated Interface in Perovskite Heterostructure α-HC(NH2)2PbI3/TiO2
AU - Feng, Hong Jian
AU - Huang, Jinsong
AU - Zeng, Xiao Cheng
N1 - Funding Information:
The authors are grateful to Dr. Jun Dai and Dr. Minggang Ju for valuable discussions. J.S.H. and X.C.Z. were supported by the National Science Foundation (NSF) through the Nebraska Materials Research Science and Engineering Center (MRSEC) (Grant No. DMR-1420645), by the NSF Grant OIA-1538893, and the Nebraska Center for Energy Sciences Research. H.J.-F. was financially supported by the National Natural Science Foundation of China (NSFC) under Grant Nos. 11304248 and 11247230, the Natural Science Basic Research Plan in Shaanxi Province of China (Program No. 2014JM1014), the Scientific Research Program Funded by Shaanxi Provincial Education Department (Program No. 2013JK0624), the Science Foundation of Northwest University(Grant No. 12NW12), Youth Bai-Ren (100 Talents Plan) Project in Shaanxi Province of China, and the scholarship under the State Scholarship Fund by China Scholarship Council (CSC).
Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2016/9/6
Y1 - 2016/9/6
N2 - It is shown that in the formamidinium (FA) lead iodide/titania heterostructure α-HC(NH2)2PbI3/TiO2 the organic layer-mediated interface, i.e., FAI/TiO2, can induce photovoltaic diode effect via positive bias poling. The band gap of the heterostructure is reduced to zero upon the positive poling due to combined effects of ion diffusion, rotation of organic moieties, and ferroelectric redistribution. The perovskite part in the organic layer-mediated interface FAI/TiO2 gives rise to a strong polarization of 18.69 μC cm−2, compared to that (0.89 μC cm−2) in the inorganic layer-mediated interface PbI2/TiO2. The strong polarization of the organic layer-mediated interface is closely related to the diode effect associated with the reordering of the ferroelectric polarization and charge distribution, as a consequence of the mobility and rotation of organic moieties in FAI/TiO2 upon the positive bias poling. The latter effect also provides an explanation on why the FAPbI3-based devices can largely reduce the scanning hysteresis in the J–V curves (Yang et al., Science 2015, 348, 1234) and why the organic layer-mediated halide perovskite heterostructure is one of the most promising candidates for the fabrication of highly efficient solar cells or optoelectronic devices.
AB - It is shown that in the formamidinium (FA) lead iodide/titania heterostructure α-HC(NH2)2PbI3/TiO2 the organic layer-mediated interface, i.e., FAI/TiO2, can induce photovoltaic diode effect via positive bias poling. The band gap of the heterostructure is reduced to zero upon the positive poling due to combined effects of ion diffusion, rotation of organic moieties, and ferroelectric redistribution. The perovskite part in the organic layer-mediated interface FAI/TiO2 gives rise to a strong polarization of 18.69 μC cm−2, compared to that (0.89 μC cm−2) in the inorganic layer-mediated interface PbI2/TiO2. The strong polarization of the organic layer-mediated interface is closely related to the diode effect associated with the reordering of the ferroelectric polarization and charge distribution, as a consequence of the mobility and rotation of organic moieties in FAI/TiO2 upon the positive bias poling. The latter effect also provides an explanation on why the FAPbI3-based devices can largely reduce the scanning hysteresis in the J–V curves (Yang et al., Science 2015, 348, 1234) and why the organic layer-mediated halide perovskite heterostructure is one of the most promising candidates for the fabrication of highly efficient solar cells or optoelectronic devices.
KW - bias poling
KW - density-functional theory
KW - organic layer-mediated interface
KW - perovskite heterostructure
KW - photovoltaic diode effect
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U2 - 10.1002/admi.201600267
DO - 10.1002/admi.201600267
M3 - Article
AN - SCOPUS:84978975452
VL - 3
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 17
M1 - 1600267
ER -