@article{7cb8d74a2ea34d3d81070c97c7bcc441,
title = "Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts",
abstract = "Two planarization techniques for high aspect ratio three dimensional pillar structured p-i-n diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by reactive ion etch-back to expose the tops of the pillar structure. The second technique also utilizes photoresist but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of three dimensional high aspect ratio structures.",
author = "Voss, {L. F.} and Q. Shao and Reinhardt, {C. E.} and Graff, {R. T.} and Conway, {A. M.} and Nikoli{\'c}, {R. J.} and Nirmalendu Deo and Cheung, {Chin Li}",
note = "Funding Information: This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract Nos. DE-AC52-07NA27344 and LLNL-JRNL-422874. This work was supported by the Domestic Nuclear Detection Office in the Department of Homeland Security. FIG. 1. Schematic of filled three dimensional micro- or nanostructure where A is the substrate material and B is the functional or support material. FIG. 2. (Color online) Fill percentage as a function of secondary spin speed for varying pillar heights. FIG. 3. (Color online) Fill percentage as a function of pillar height for constant spin speed. FIG. 4. SEM images of 45 μ m pillars after one, two, and three coats of photoresist. FIG. 5. B 10 filled structure (a) before and (b) after ECR plasma etching. FIG. 6. (Color online) Current-voltage characteristics for functional and shortened devices. FIG. 7. Progression from photoresist covered pillars to revealed pillar tops for [(a) and (b)] unfilled pillars and [(c) and (d)] B 10 filled pillars. FIG. 8. (Color online) Schematic of planarizing by etch rate matching. FIG. 9. (Color online) Etch rate and selectivity for B 10 and S1518 photoresist. FIG. 10. Final detector morphology with etch matched planarization. ",
year = "2010",
month = sep,
doi = "10.1116/1.3478306",
language = "English (US)",
volume = "28",
pages = "916--920",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "5",
}