Porous boron nitride with tunable pore size

Jun Dai, Xiaojun Wu, Jinlong Yang, Xiao Cheng Zeng

Research output: Contribution to journalArticle

43 Scopus citations

Abstract

On the basis of a global structural search and first-principles calculations, we predict two types of porous boron-nitride (BN) networks that can be built up with zigzag BN nanoribbons (BNNRs). The BNNRs are either directly connected with puckered B (N) atoms at the edge (type I) or connected with sp3-bonded BN chains (type II). Besides mechanical stability, these materials are predicted to be thermally stable at 1000 K. The porous BN materials entail large surface areas, ranging from 2800 to 4800 m2/g. In particular, type-II BN material with relatively large pores is highly favorable for hydrogen storage because the computed hydrogen adsorption energy (-0.18 eV) is very close to the optimal adsorption energy (-0.15 eV) suggested for reversible hydrogen storage at room temperature. Moreover, the type-II materials are semiconductors with width-dependent direct bandgaps, rendering the type-II BN materials promising not only for hydrogen storage but also for optoelectronic and photonic applications.

Original languageEnglish (US)
Pages (from-to)393-398
Number of pages6
JournalJournal of Physical Chemistry Letters
Volume5
Issue number2
DOIs
StatePublished - Jan 16 2014

Keywords

  • direct bandgap semiconductor
  • global structure search
  • hydrogen storage
  • porous boron nitride network

ASJC Scopus subject areas

  • Materials Science(all)
  • Physical and Theoretical Chemistry

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