Preparation of (0 0 1)-oriented PZT thin films on silicon wafers using pulsed laser deposition

Jing Zhao, Li Lu, C. V. Thompson, Y. F. Lu, W. D. Song

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Completely (0 0 1)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) thin films deposited on (1 0 0)-silicon wafers with SrTiO3 (STO)/MgO as a buffer layer system and YBCO as a electrode, were prepared by using KrF excimer pulsed-laser deposition. The epitaxial relationships, i.e. PZT(0 0 1)∥YBCO(0 0 1)∥SrTiO3(1 0 0)∥MgO(1 0 0)∥Si(1 0 0) and PZT(1 1 0) ∥YBCO(1 1 0)∥SrTiO3(0 1 1)∥MgO(0 1 1) were detected using X-ray θ-2θ scans and pole figures or φ-scans. Grain size and surface morphologies of the as-prepared films were examined using atomic force microscopy and scanning electron microscopy.

Original languageEnglish (US)
Pages (from-to)173-177
Number of pages5
JournalJournal of Crystal Growth
Volume225
Issue number2-4
DOIs
StatePublished - May 2001

Keywords

  • A3. Laser epitaxy
  • A3. Pulsed laser deposition

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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