TY - JOUR
T1 - Printed Electronic Devices with Inks of TiS3Quasi-One-Dimensional van der Waals Material
AU - Baraghani, Saba
AU - Abourahma, Jehad
AU - Barani, Zahra
AU - Mohammadzadeh, Amirmahdi
AU - Sudhindra, Sriharsha
AU - Lipatov, Alexey
AU - Sinitskii, Alexander
AU - Kargar, Fariborz
AU - Balandin, Alexander A.
N1 - Funding Information:
The work at UC Riverside was supported, in part, by the National Science Foundation (NSF) program Designing Materials to Revolutionize and Engineer our Future (DMREF) via a project DMR-1921958 entitled “Collaborative Research: Data Driven Discovery of Synthesis Pathways and Distinguishing Electronic Phenomena of 1D van der Waals Bonded Solids”. The work at UNL was supported by the NSF, through ECCS 1740136, as well as by the nCORE, which is a wholly-owned subsidiary of the Semiconductor Research Corporation (SRC), through the Center on Antiferromagnetic Magneto-electric Memory and Logic (AMML), task No. 2760.002.
Publisher Copyright:
© 2021 American Chemical Society
PY - 2021/10/6
Y1 - 2021/10/6
N2 - We report on the fabrication and characterization of electronic devices printed with inks of quasi-one-dimensional (1D) van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allow for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature-dependent electrical measurements indicate that the electron transport in the printed devices is dominated by the electron hopping mechanisms. The low-frequency electronic noise in the printed devices is of 1/fγ-type with γ ∼ 1 near-room temperature (fis the frequency). The abrupt changes in the temperature dependence of the noise spectral density and γ parameter can be indicative of the phase transition in individual TiS3nanoribbons as well as modifications in the hopping transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.
AB - We report on the fabrication and characterization of electronic devices printed with inks of quasi-one-dimensional (1D) van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allow for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature-dependent electrical measurements indicate that the electron transport in the printed devices is dominated by the electron hopping mechanisms. The low-frequency electronic noise in the printed devices is of 1/fγ-type with γ ∼ 1 near-room temperature (fis the frequency). The abrupt changes in the temperature dependence of the noise spectral density and γ parameter can be indicative of the phase transition in individual TiS3nanoribbons as well as modifications in the hopping transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.
KW - TiS3
KW - electron hopping conduction
KW - low-frequency noise
KW - printed electronics
KW - quasi-1D materials
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U2 - 10.1021/acsami.1c12948
DO - 10.1021/acsami.1c12948
M3 - Article
C2 - 34553916
AN - SCOPUS:85116697288
VL - 13
SP - 47033
EP - 47042
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 39
ER -