TY - JOUR
T1 - Printed Electronic Devices with Inks of TiS3Quasi-One-Dimensional van der Waals Material
AU - Baraghani, Saba
AU - Abourahma, Jehad
AU - Barani, Zahra
AU - Mohammadzadeh, Amirmahdi
AU - Sudhindra, Sriharsha
AU - Lipatov, Alexey
AU - Sinitskii, Alexander
AU - Kargar, Fariborz
AU - Balandin, Alexander A.
N1 - Publisher Copyright:
© 2021 American Chemical Society
PY - 2021/10/6
Y1 - 2021/10/6
N2 - We report on the fabrication and characterization of electronic devices printed with inks of quasi-one-dimensional (1D) van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allow for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature-dependent electrical measurements indicate that the electron transport in the printed devices is dominated by the electron hopping mechanisms. The low-frequency electronic noise in the printed devices is of 1/fγ-type with γ ∼ 1 near-room temperature (fis the frequency). The abrupt changes in the temperature dependence of the noise spectral density and γ parameter can be indicative of the phase transition in individual TiS3nanoribbons as well as modifications in the hopping transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.
AB - We report on the fabrication and characterization of electronic devices printed with inks of quasi-one-dimensional (1D) van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allow for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature-dependent electrical measurements indicate that the electron transport in the printed devices is dominated by the electron hopping mechanisms. The low-frequency electronic noise in the printed devices is of 1/fγ-type with γ ∼ 1 near-room temperature (fis the frequency). The abrupt changes in the temperature dependence of the noise spectral density and γ parameter can be indicative of the phase transition in individual TiS3nanoribbons as well as modifications in the hopping transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.
KW - TiS3
KW - electron hopping conduction
KW - low-frequency noise
KW - printed electronics
KW - quasi-1D materials
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U2 - 10.1021/acsami.1c12948
DO - 10.1021/acsami.1c12948
M3 - Article
C2 - 34553916
AN - SCOPUS:85116697288
SN - 1944-8244
VL - 13
SP - 47033
EP - 47042
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 39
ER -