Problems with synthesis of chalcopyrite Culn1-xB xSe2

J. Olejnicek; S. A. Darveau; C. L. Exstrom; R. J. Soukup; N. J. Ianno; C. A. Kamler; J. L. Huguenin-Love

doi:10.4028/3-908454-02-6

Problems with synthesis of chalcopyrite Culn_1-xB _xSe₂

J. Olejnicek, S. A. Darveau, C. L. Exstrom, R. J. Soukup, N. J. Ianno, C. A. Kamler, J. L. Huguenin-Love

Research output: Contribution to journal › Conference article › peer-review

Abstract

Thin films of CuIn_-xB_xSe₂ (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn _1-xGa_xSe₂ (CIGS) and CuIn_1-xAl _xSe₂ (CIAS). The higher band gap near optimum value ~1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn _o.74Ga_0.26Se₂). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu_2-xSe phases and by accumulation boron near to the substrate.

Original language	English (US)
Pages (from-to)	32-36
Number of pages	5
Journal	Materials Science Forum
Volume	609
DOIs	https://doi.org/10.4028/3-908454-02-6
State	Published - 2009
Externally published	Yes
Event	1st International Conference on Thin Films and Porous Materials, ICTFPM'08 - Algiers, Algeria Duration: May 19 2008 → May 22 2008

Keywords

CIBS
Selenization
Solar cells

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/3-908454-02-6

Cite this

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title = "Problems with synthesis of chalcopyrite Culn1-xB xSe2",

abstract = "Thin films of CuIn-xBxSe2 (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn 1-xGaxSe2 (CIGS) and CuIn1-xAl xSe2 (CIAS). The higher band gap near optimum value ~1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn o.74Ga0.26Se2). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu2-xSe phases and by accumulation boron near to the substrate.",

keywords = "CIBS, Selenization, Solar cells",

author = "J. Olejnicek and Darveau, {S. A.} and Exstrom, {C. L.} and Soukup, {R. J.} and Ianno, {N. J.} and Kamler, {C. A.} and Huguenin-Love, {J. L.}",

year = "2009",

doi = "10.4028/3-908454-02-6",

language = "English (US)",

volume = "609",

pages = "32--36",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

note = "1st International Conference on Thin Films and Porous Materials, ICTFPM'08 ; Conference date: 19-05-2008 Through 22-05-2008",

}

TY - JOUR

T1 - Problems with synthesis of chalcopyrite Culn1-xB xSe2

AU - Olejnicek, J.

AU - Darveau, S. A.

AU - Exstrom, C. L.

AU - Soukup, R. J.

AU - Ianno, N. J.

AU - Kamler, C. A.

AU - Huguenin-Love, J. L.

PY - 2009

Y1 - 2009

N2 - Thin films of CuIn-xBxSe2 (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn 1-xGaxSe2 (CIGS) and CuIn1-xAl xSe2 (CIAS). The higher band gap near optimum value ~1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn o.74Ga0.26Se2). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu2-xSe phases and by accumulation boron near to the substrate.

AB - Thin films of CuIn-xBxSe2 (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn 1-xGaxSe2 (CIGS) and CuIn1-xAl xSe2 (CIAS). The higher band gap near optimum value ~1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn o.74Ga0.26Se2). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu2-xSe phases and by accumulation boron near to the substrate.

KW - CIBS

KW - Selenization

KW - Solar cells

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M3 - Conference article

AN - SCOPUS:64349103797

SN - 0255-5476

VL - 609

SP - 32

EP - 36

JO - Materials Science Forum

JF - Materials Science Forum

T2 - 1st International Conference on Thin Films and Porous Materials, ICTFPM'08

Y2 - 19 May 2008 through 22 May 2008

ER -