Problems with synthesis of chalcopyrite Culn1-xB xSe2

J. Olejnicek, S. A. Darveau, C. L. Exstrom, R. J. Soukup, N. J. Ianno, C. A. Kamler, J. L. Huguenin-Love

Research output: Contribution to journalConference articlepeer-review


Thin films of CuIn-xBxSe2 (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn 1-xGaxSe2 (CIGS) and CuIn1-xAl xSe2 (CIAS). The higher band gap near optimum value ~1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn o.74Ga0.26Se2). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu2-xSe phases and by accumulation boron near to the substrate.

Original languageEnglish (US)
Pages (from-to)32-36
Number of pages5
JournalMaterials Science Forum
StatePublished - 2009
Externally publishedYes
Event1st International Conference on Thin Films and Porous Materials, ICTFPM'08 - Algiers, Algeria
Duration: May 19 2008May 22 2008


  • CIBS
  • Selenization
  • Solar cells

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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