Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition

Z. M. Ren, Y. F. Lu, Z. H. Mai, B. A. Cheong, S. K. Chow, J. P. Wang, T. C. Chong

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Boron-Carbon-Nitrogen BxCyNz thin films were deposited by excimer laser ablation of boron carbide (B4C) under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by X-ray photoelectron spectroscopy (XPS), Raman and infrared spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.

Original languageEnglish (US)
Pages (from-to)520-528
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3618
StatePublished - 1999
EventProceedings of the 1999 Laser Applications in Microelectronic and Optoelectronic Manufacturing IV (LAMOM-IV) - San Jose, CA, USA
Duration: Jan 25 1999Jan 27 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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