TY - GEN
T1 - Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se
AU - Slaymaker, Laura E.
AU - Hoffman, Nathan M.
AU - Ingersoll, Matthew A.
AU - Jensen, Matthew R.
AU - Olejniček, Jiři
AU - Exstrom, Christopher L.
AU - Darveau, Scott A.
AU - Soukup, Rodney J.
AU - Ianno, Natale J.
AU - Sarkar, Amitabha
AU - Kment, Štěpán
N1 - Funding Information:
Work supported by the U.S. Department of Energy (Grant DE-FG36-08GO88007) and the Nebraska Center for Energy Sciences Research.
PY - 2012
Y1 - 2012
N2 - Many reported CuIn 1-xGa xSe 2 (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H 2Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn 1-xGa xSe 2 (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2 and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2- dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn 1-xGa xS 2 via spray deposition of a toluene-based "nanoink" suspension. The two-layer sample was annealed at 550°C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn 1-xGa xS 2 nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A, phonon frequencies change nearly linearly between those for CuInSe 2 and CuGaSe 2.
AB - Many reported CuIn 1-xGa xSe 2 (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H 2Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn 1-xGa xSe 2 (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2 and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2- dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn 1-xGa xS 2 via spray deposition of a toluene-based "nanoink" suspension. The two-layer sample was annealed at 550°C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn 1-xGa xS 2 nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A, phonon frequencies change nearly linearly between those for CuInSe 2 and CuGaSe 2.
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U2 - 10.1557/opl.2011.1152
DO - 10.1557/opl.2011.1152
M3 - Conference contribution
AN - SCOPUS:84055217129
SN - 9781605113012
T3 - Materials Research Society Symposium Proceedings
SP - 77
EP - 82
BT - Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -