Pulsed thermal stress of thin silicon carbide films

E. A. Jonnson; F. Namavar; E. Cortesi; I. H. Loh; M. M. Nordberg; C. J. von Benken

Pulsed thermal stress of thin silicon carbide films

E. A. Jonnson, F. Namavar, E. Cortesi, I. H. Loh, M. M. Nordberg, C. J. von Benken

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have used intense pulsed electron beams to examine the transient thermal stress response of thin silicon carbide films on aluminum substrates. We examine one widely used process for improving thin film adhesion: deposition of thermal-expansion matched intermediate layers. Rutherford backscattering spectra show the composition of the surface as a function of depth and illustrate the role of the intermediate layer in improving thin film adhesion.

Original language	English (US)
Pages (from-to)	653-658
Number of pages	6
Journal	International SAMPE Symposium and Exhibition (Proceedings)
Volume	3
State	Published - 1989
Externally published	Yes
Event	3rd International SAMPE Electronics Conference: Electronic Materials and Processes - Los Angeles, CA, USA Duration: Jun 20 1989 → Jun 22 1989

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Pulsed thermal stress of thin silicon carbide films",

abstract = "We have used intense pulsed electron beams to examine the transient thermal stress response of thin silicon carbide films on aluminum substrates. We examine one widely used process for improving thin film adhesion: deposition of thermal-expansion matched intermediate layers. Rutherford backscattering spectra show the composition of the surface as a function of depth and illustrate the role of the intermediate layer in improving thin film adhesion.",

author = "Jonnson, {E. A.} and F. Namavar and E. Cortesi and Loh, {I. H.} and Nordberg, {M. M.} and {von Benken}, {C. J.}",

year = "1989",

language = "English (US)",

volume = "3",

pages = "653--658",

journal = "International SAMPE Symposium and Exhibition (Proceedings)",

issn = "0891-0138",

publisher = "Soc. for the Advancement of Material and Process Engineering",

note = "3rd International SAMPE Electronics Conference: Electronic Materials and Processes ; Conference date: 20-06-1989 Through 22-06-1989",

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TY - JOUR

T1 - Pulsed thermal stress of thin silicon carbide films

AU - Jonnson, E. A.

AU - Namavar, F.

AU - Cortesi, E.

AU - Loh, I. H.

AU - Nordberg, M. M.

AU - von Benken, C. J.

PY - 1989

Y1 - 1989

N2 - We have used intense pulsed electron beams to examine the transient thermal stress response of thin silicon carbide films on aluminum substrates. We examine one widely used process for improving thin film adhesion: deposition of thermal-expansion matched intermediate layers. Rutherford backscattering spectra show the composition of the surface as a function of depth and illustrate the role of the intermediate layer in improving thin film adhesion.

AB - We have used intense pulsed electron beams to examine the transient thermal stress response of thin silicon carbide films on aluminum substrates. We examine one widely used process for improving thin film adhesion: deposition of thermal-expansion matched intermediate layers. Rutherford backscattering spectra show the composition of the surface as a function of depth and illustrate the role of the intermediate layer in improving thin film adhesion.

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UR - http://www.scopus.com/inward/citedby.url?scp=0024864016&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024864016

SN - 0891-0138

VL - 3

SP - 653

EP - 658

JO - International SAMPE Symposium and Exhibition (Proceedings)

JF - International SAMPE Symposium and Exhibition (Proceedings)

T2 - 3rd International SAMPE Electronics Conference: Electronic Materials and Processes

Y2 - 20 June 1989 through 22 June 1989

ER -

Pulsed thermal stress of thin silicon carbide films

Abstract

ASJC Scopus subject areas

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