Pulsed thermal stress of thin silicon carbide films

E. A. Jonnson, F. Namavar, E. Cortesi, I. H. Loh, M. M. Nordberg, C. J. von Benken

Research output: Contribution to journalConference article

Abstract

We have used intense pulsed electron beams to examine the transient thermal stress response of thin silicon carbide films on aluminum substrates. We examine one widely used process for improving thin film adhesion: deposition of thermal-expansion matched intermediate layers. Rutherford backscattering spectra show the composition of the surface as a function of depth and illustrate the role of the intermediate layer in improving thin film adhesion.

Original languageEnglish (US)
Pages (from-to)653-658
Number of pages6
JournalInternational SAMPE Symposium and Exhibition (Proceedings)
Volume3
StatePublished - 1989
Event3rd International SAMPE Electronics Conference: Electronic Materials and Processes - Los Angeles, CA, USA
Duration: Jun 20 1989Jun 22 1989

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Jonnson, E. A., Namavar, F., Cortesi, E., Loh, I. H., Nordberg, M. M., & von Benken, C. J. (1989). Pulsed thermal stress of thin silicon carbide films. International SAMPE Symposium and Exhibition (Proceedings), 3, 653-658.