Radio-frequency plasma chemical vapor deposition growth of diamond

Duane E. Meyer; Rodney O. Dillon; John A. Woollam

doi:10.1116/1.575936

Radio-frequency plasma chemical vapor deposition growth of diamond

Duane E. Meyer, Rodney O. Dillon, John A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Article

30 Scopus citations

Abstract

Plasma chemical vapor deposition (CVD) at 13.56 MHz has been used to produce diamond particles in two different inductively coupled systems with a mixture of methane and hydrogen. The effect of a diamondlike carbon (DLC) overcoating on silicon, niobium, and stainless-steel substrates has been investigated and in the case of silicon has been found to enhance particle formation as compared to uncoated polished silicon. In addition the use of carbon monoxide in hydrogen has been found to produce well-defined individual faceted particles as well as polycrystalline films on quartz and DLC coated silicon substrates. Plasma CVD is a competitive approach to production of diamond films. It has the advantage over microwave systems of being easily scaled to large volume and high power.

Original language	English (US)
Pages (from-to)	2325-2327
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	7
Issue number	3
DOIs	https://doi.org/10.1116/1.575936
State	Published - May 1989

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Meyer, D. E., Dillon, R. O., & Woollam, J. A. (1989). Radio-frequency plasma chemical vapor deposition growth of diamond. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 7(3), 2325-2327. https://doi.org/10.1116/1.575936

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