TY - JOUR
T1 - Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li
AU - Bundesmann, C.
AU - Ashkenov, N.
AU - Schubert, M.
AU - Spemann, D.
AU - Butz, T.
AU - Kaidashev, E. M.
AU - Lorenz, M.
AU - Grundmann, M.
PY - 2003/9/8
Y1 - 2003/9/8
N2 - A study to investigate the Raman Scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li is presented. Polarized micro-Raman measurements were formed to study the phonon modes of doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm-1 were observed for Fe, Sb, and Al doped films. It was observed that Li doped ZnO did not reveal additional modes.
AB - A study to investigate the Raman Scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li is presented. Polarized micro-Raman measurements were formed to study the phonon modes of doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm-1 were observed for Fe, Sb, and Al doped films. It was observed that Li doped ZnO did not reveal additional modes.
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U2 - 10.1063/1.1609251
DO - 10.1063/1.1609251
M3 - Article
AN - SCOPUS:0141886199
SN - 0003-6951
VL - 83
SP - 1974
EP - 1976
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 10
ER -