Raman scattering studies of Si1-xGex epitaxial layers grown by atmospheric pressure chemical vapor deposition

C. H. Perry; Feng Lu; F. Namavar

doi:10.1016/0038-1098(93)90062-R

Raman scattering studies of Si_1-xGe_x epitaxial layers grown by atmospheric pressure chemical vapor deposition

C. H. Perry, Feng Lu, F. Namavar

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27 Scopus citations

Abstract

Room temperature Raman spectra are reported of Si_1-xGe_x epitaxial layers on Si substrates (for 0.08≤x≤0.2). The samples were grown using atmospheric pressure chemical vapor deposition techniques. Layer thicknesses varied from 0.03-10 μm. The relative frequency shift of the Si-Si phonon mode for the SiGe strained epilayers from an incommensurate pseudo-alloy of the same composition is used as a quantitative measure of the lattice relaxation factor. For thicknesses below a critical value the Raman data indicate that the films are highly strained and the growth is commensurate with the substrate whereas thicker films are partially or fully relaxed.

Original language	English (US)
Pages (from-to)	613-617
Number of pages	5
Journal	Solid State Communications
Volume	88
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(93)90062-R
State	Published - Nov 1993
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(93)90062-R

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@article{0ef78f98157a445d974a7a240a0e7d52,

title = "Raman scattering studies of Si1-xGex epitaxial layers grown by atmospheric pressure chemical vapor deposition",

abstract = "Room temperature Raman spectra are reported of Si1-xGex epitaxial layers on Si substrates (for 0.08≤x≤0.2). The samples were grown using atmospheric pressure chemical vapor deposition techniques. Layer thicknesses varied from 0.03-10 μm. The relative frequency shift of the Si-Si phonon mode for the SiGe strained epilayers from an incommensurate pseudo-alloy of the same composition is used as a quantitative measure of the lattice relaxation factor. For thicknesses below a critical value the Raman data indicate that the films are highly strained and the growth is commensurate with the substrate whereas thicker films are partially or fully relaxed.",

author = "Perry, {C. H.} and Feng Lu and F. Namavar",

note = "Funding Information: AcEnovrZedgementa - The work at Northeastern University was supported in part by the Air Force Systems Command. C.H.P. thanks the National Research Council for a Research Associateship at the Rome Laboratory, Hanscom Air Force Base from 1990-91. The work at Spire Corporation was supported in part by a SBIR contract from N.A.S.A Langley Research Center.",

year = "1993",

month = nov,

doi = "10.1016/0038-1098(93)90062-R",

language = "English (US)",

volume = "88",

pages = "613--617",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "8",

}

TY - JOUR

T1 - Raman scattering studies of Si1-xGex epitaxial layers grown by atmospheric pressure chemical vapor deposition

AU - Perry, C. H.

AU - Lu, Feng

AU - Namavar, F.

N1 - Funding Information: AcEnovrZedgementa - The work at Northeastern University was supported in part by the Air Force Systems Command. C.H.P. thanks the National Research Council for a Research Associateship at the Rome Laboratory, Hanscom Air Force Base from 1990-91. The work at Spire Corporation was supported in part by a SBIR contract from N.A.S.A Langley Research Center.

PY - 1993/11

Y1 - 1993/11

N2 - Room temperature Raman spectra are reported of Si1-xGex epitaxial layers on Si substrates (for 0.08≤x≤0.2). The samples were grown using atmospheric pressure chemical vapor deposition techniques. Layer thicknesses varied from 0.03-10 μm. The relative frequency shift of the Si-Si phonon mode for the SiGe strained epilayers from an incommensurate pseudo-alloy of the same composition is used as a quantitative measure of the lattice relaxation factor. For thicknesses below a critical value the Raman data indicate that the films are highly strained and the growth is commensurate with the substrate whereas thicker films are partially or fully relaxed.

AB - Room temperature Raman spectra are reported of Si1-xGex epitaxial layers on Si substrates (for 0.08≤x≤0.2). The samples were grown using atmospheric pressure chemical vapor deposition techniques. Layer thicknesses varied from 0.03-10 μm. The relative frequency shift of the Si-Si phonon mode for the SiGe strained epilayers from an incommensurate pseudo-alloy of the same composition is used as a quantitative measure of the lattice relaxation factor. For thicknesses below a critical value the Raman data indicate that the films are highly strained and the growth is commensurate with the substrate whereas thicker films are partially or fully relaxed.

UR - http://www.scopus.com/inward/record.url?scp=0027694209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027694209&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(93)90062-R

DO - 10.1016/0038-1098(93)90062-R

M3 - Article

AN - SCOPUS:0027694209

SN - 0038-1098

VL - 88

SP - 613

EP - 617

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Raman scattering studies of Si_1-xGe_x epitaxial layers grown by atmospheric pressure chemical vapor deposition

Abstract

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