Reaction pathway insights into the solvothermal preparation of CuIn 1-xGaxSe2 nanocrystalline materials

Christopher L. Exstrom, Scott A. Darveau, Andrea L. Martinez-Skinner, Matt Ingersoll, Jiri Olejnicek, Anatole Mirasano, Adam T. Haussler, James Huguenin-Love, Chad Kamler, Martin Diaz, N. J. Ianno, R. J. Soukup

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Reaction pathway investigations of the solvothermal preparation of nanocrystalline CuIn1-xGaxSe2 in triethylenetetramine reveal the early formation of a previously unreported Cu2-xSe(s) intermediate. Over 24 hours, this reacts with In and Se species to form CuInSe2(s). If Ga is present, the reaction proceeds over an additional 48 hours to form CuIn1-xGaxSe 2. Adding ammonium halide salts reduces the CuInSe2 formation time to as little as 30 minutes. It is proposed that in these cases, Cu2-xSe particle growth is limited via a competitive Cu-halide complex formation. The smaller Cu2-xSe particles may react and form CuInSe2 more rapidly. A reaction pathway scheme consistent with experimental results and previous literature reports is proposed.

Original languageEnglish (US)
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
StatePublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Reaction pathway insights into the solvothermal preparation of CuIn <sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> nanocrystalline materials'. Together they form a unique fingerprint.

Cite this