Reaction pathway insights into the solvothermal preparation of CuIn 1-xGaxSe2 nanocrystalline materials

Christopher L. Exstrom; Scott A. Darveau; Andrea L. Martinez-Skinner; Matt Ingersoll; Jiri Olejnicek; Anatole Mirasano; Adam T. Haussler; James Huguenin-Love; Chad Kamler; Martin Diaz; N. J. Ianno; R. J. Soukup

doi:10.1109/PVSC.2008.4922729

Reaction pathway insights into the solvothermal preparation of CuIn _1-xGa_xSe₂ nanocrystalline materials

Christopher L. Exstrom, Scott A. Darveau, Andrea L. Martinez-Skinner, Matt Ingersoll, Jiri Olejnicek, Anatole Mirasano, Adam T. Haussler, James Huguenin-Love, Chad Kamler, Martin Diaz, N. J. Ianno, R. J. Soukup

Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Reaction pathway investigations of the solvothermal preparation of nanocrystalline CuIn_1-xGa_xSe₂ in triethylenetetramine reveal the early formation of a previously unreported Cu_2-xSe(s) intermediate. Over 24 hours, this reacts with In and Se species to form CuInSe₂(s). If Ga is present, the reaction proceeds over an additional 48 hours to form CuIn_1-xGa_xSe ₂. Adding ammonium halide salts reduces the CuInSe₂ formation time to as little as 30 minutes. It is proposed that in these cases, Cu_2-xSe particle growth is limited via a competitive Cu-halide complex formation. The smaller Cu_2-xSe particles may react and form CuInSe₂ more rapidly. A reaction pathway scheme consistent with experimental results and previous literature reports is proposed.

Original language	English (US)
Title of host publication	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs	https://doi.org/10.1109/PVSC.2008.4922729
State	Published - 2008
Event	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: May 11 2008 → May 16 2008

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country/Territory	United States
City	San Diego, CA
Period	5/11/08 → 5/16/08

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2008.4922729

Cite this

Exstrom, C. L., Darveau, S. A., Martinez-Skinner, A. L., Ingersoll, M., Olejnicek, J., Mirasano, A., Haussler, A. T., Huguenin-Love, J., Kamler, C., Diaz, M., Ianno, N. J., & Soukup, R. J. (2008). Reaction pathway insights into the solvothermal preparation of CuIn _1-xGa_xSe₂ nanocrystalline materials. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 Article 4922729 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922729

Reaction pathway insights into the solvothermal preparation of CuIn _1-xGa_xSe₂ nanocrystalline materials. / Exstrom, Christopher L.; Darveau, Scott A.; Martinez-Skinner, Andrea L. et al.
33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922729 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Exstrom, CL, Darveau, SA, Martinez-Skinner, AL, Ingersoll, M, Olejnicek, J, Mirasano, A, Haussler, AT, Huguenin-Love, J, Kamler, C, Diaz, M, Ianno, NJ & Soukup, RJ 2008, Reaction pathway insights into the solvothermal preparation of CuIn _1-xGa_xSe₂ nanocrystalline materials. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922729, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922729

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abstract = "Reaction pathway investigations of the solvothermal preparation of nanocrystalline CuIn1-xGaxSe2 in triethylenetetramine reveal the early formation of a previously unreported Cu2-xSe(s) intermediate. Over 24 hours, this reacts with In and Se species to form CuInSe2(s). If Ga is present, the reaction proceeds over an additional 48 hours to form CuIn1-xGaxSe 2. Adding ammonium halide salts reduces the CuInSe2 formation time to as little as 30 minutes. It is proposed that in these cases, Cu2-xSe particle growth is limited via a competitive Cu-halide complex formation. The smaller Cu2-xSe particles may react and form CuInSe2 more rapidly. A reaction pathway scheme consistent with experimental results and previous literature reports is proposed.",

author = "Exstrom, {Christopher L.} and Darveau, {Scott A.} and Martinez-Skinner, {Andrea L.} and Matt Ingersoll and Jiri Olejnicek and Anatole Mirasano and Haussler, {Adam T.} and James Huguenin-Love and Chad Kamler and Martin Diaz and Ianno, {N. J.} and Soukup, {R. J.}",

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AB - Reaction pathway investigations of the solvothermal preparation of nanocrystalline CuIn1-xGaxSe2 in triethylenetetramine reveal the early formation of a previously unreported Cu2-xSe(s) intermediate. Over 24 hours, this reacts with In and Se species to form CuInSe2(s). If Ga is present, the reaction proceeds over an additional 48 hours to form CuIn1-xGaxSe 2. Adding ammonium halide salts reduces the CuInSe2 formation time to as little as 30 minutes. It is proposed that in these cases, Cu2-xSe particle growth is limited via a competitive Cu-halide complex formation. The smaller Cu2-xSe particles may react and form CuInSe2 more rapidly. A reaction pathway scheme consistent with experimental results and previous literature reports is proposed.

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