Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors

Xiaolu Yin; Yi Yang; Yen Fu Liu; Jiong Hua; Andrei Sokolov; Dan Ewing; Paul J. De Rego; Kaizhong Gao; Sy Hwang Liou

doi:10.1117/12.2529569

Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors

Xiaolu Yin, Yi Yang, Yen Fu Liu, Jiong Hua, Andrei Sokolov, Dan Ewing, Paul J. De Rego, Kaizhong Gao, Sy Hwang Liou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

The development of high-sensitivity magnetic field sensors at low frequencies and ambient temperatures is of great importance for many practical applications, where different aspects of the sensor performance need to be considered. In this paper, it is presented that by tuning magnetic nanostructures of the free layers in magnetic tunnel junctions, widedynamic-range or ultra-high-sensitivity tunneling magnetoresistive sensors can be obtained. Tunneling magnetoresistive sensors with a linear response from -75 mT to +75 mT are demonstrated. Also, it is demonstrated that an optimized ultra-high-sensitivity magnetic sensor with a sensitivity of 57,790 %mT can be achieved. This sensitivity is currently the highest among all magnetoresistive sensors that have been reported. The estimated noise of our magnetic sensor is 2.3 pTHz12 at 1 Hz and 190 fTHz12 at 100 Hz respectively. This tunneling magnetoresistive sensor dissipates only 25 μW of power when it operates under an applied voltage of 1 V at room temperature.

Original language	English (US)
Title of host publication	Spintronics XII
Editors	Henri-Jean M. Drouhin, Jean-Eric Wegrowe, Manijeh Razeghi, Henri Jaffres
Publisher	SPIE
ISBN (Electronic)	9781510628731
DOIs	https://doi.org/10.1117/12.2529569
State	Published - 2019
Event	Spintronics XII 2019 - San Diego, United States Duration: Aug 11 2019 → Aug 15 2019

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11090
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Spintronics XII 2019
Country/Territory	United States
City	San Diego
Period	8/11/19 → 8/15/19

Keywords

Magnetic flux concentrator
Magnetic nanostructure
Magnetic tunnel junction
Multilayer thin film
Tunneling magnetoresistive sensor
Uultra-high sensitivity
Wide dynamic range

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2529569

Cite this

Yin, X., Yang, Y., Liu, Y. F., Hua, J., Sokolov, A., Ewing, D., De Rego, P. J., Gao, K., & Liou, S. H. (2019). Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors. In H-J. M. Drouhin, J-E. Wegrowe, M. Razeghi, & H. Jaffres (Eds.), Spintronics XII [110903H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11090). SPIE. https://doi.org/10.1117/12.2529569

Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors. / Yin, Xiaolu; Yang, Yi; Liu, Yen Fu et al.
Spintronics XII. ed. / Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffres. SPIE, 2019. 110903H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11090).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yin, X, Yang, Y, Liu, YF, Hua, J, Sokolov, A, Ewing, D, De Rego, PJ, Gao, K & Liou, SH 2019, Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors. in H-JM Drouhin, J-E Wegrowe, M Razeghi & H Jaffres (eds), Spintronics XII., 110903H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11090, SPIE, Spintronics XII 2019, San Diego, United States, 8/11/19. https://doi.org/10.1117/12.2529569

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title = "Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors",

abstract = "The development of high-sensitivity magnetic field sensors at low frequencies and ambient temperatures is of great importance for many practical applications, where different aspects of the sensor performance need to be considered. In this paper, it is presented that by tuning magnetic nanostructures of the free layers in magnetic tunnel junctions, widedynamic-range or ultra-high-sensitivity tunneling magnetoresistive sensors can be obtained. Tunneling magnetoresistive sensors with a linear response from -75 mT to +75 mT are demonstrated. Also, it is demonstrated that an optimized ultra-high-sensitivity magnetic sensor with a sensitivity of 57,790 %mT can be achieved. This sensitivity is currently the highest among all magnetoresistive sensors that have been reported. The estimated noise of our magnetic sensor is 2.3 pTHz12 at 1 Hz and 190 fTHz12 at 100 Hz respectively. This tunneling magnetoresistive sensor dissipates only 25 μW of power when it operates under an applied voltage of 1 V at room temperature.",

keywords = "Magnetic flux concentrator, Magnetic nanostructure, Magnetic tunnel junction, Multilayer thin film, Tunneling magnetoresistive sensor, Uultra-high sensitivity, Wide dynamic range",

author = "Xiaolu Yin and Yi Yang and Liu, {Yen Fu} and Jiong Hua and Andrei Sokolov and Dan Ewing and {De Rego}, {Paul J.} and Kaizhong Gao and Liou, {Sy Hwang}",

note = "Funding Information: This work was supported by Honeywell Federal Manufacturing & Technologies. The MTJ samples are prepared in the Nebraska Nanoscale Facility: National Nanotechnology Coordinated Infrastructure and the Nebraska Center for Materials and Nanoscience, which are supported by the National Science Foundation under Award NNCI-1542182, and the Nebraska Research Initiative. Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Spintronics XII 2019 ; Conference date: 11-08-2019 Through 15-08-2019",

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AU - Yin, Xiaolu

AU - Yang, Yi

AU - Liu, Yen Fu

AU - Hua, Jiong

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AU - Ewing, Dan

AU - De Rego, Paul J.

AU - Gao, Kaizhong

AU - Liou, Sy Hwang

N1 - Funding Information: This work was supported by Honeywell Federal Manufacturing & Technologies. The MTJ samples are prepared in the Nebraska Nanoscale Facility: National Nanotechnology Coordinated Infrastructure and the Nebraska Center for Materials and Nanoscience, which are supported by the National Science Foundation under Award NNCI-1542182, and the Nebraska Research Initiative. Publisher Copyright: © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

PY - 2019

Y1 - 2019

N2 - The development of high-sensitivity magnetic field sensors at low frequencies and ambient temperatures is of great importance for many practical applications, where different aspects of the sensor performance need to be considered. In this paper, it is presented that by tuning magnetic nanostructures of the free layers in magnetic tunnel junctions, widedynamic-range or ultra-high-sensitivity tunneling magnetoresistive sensors can be obtained. Tunneling magnetoresistive sensors with a linear response from -75 mT to +75 mT are demonstrated. Also, it is demonstrated that an optimized ultra-high-sensitivity magnetic sensor with a sensitivity of 57,790 %mT can be achieved. This sensitivity is currently the highest among all magnetoresistive sensors that have been reported. The estimated noise of our magnetic sensor is 2.3 pTHz12 at 1 Hz and 190 fTHz12 at 100 Hz respectively. This tunneling magnetoresistive sensor dissipates only 25 μW of power when it operates under an applied voltage of 1 V at room temperature.

AB - The development of high-sensitivity magnetic field sensors at low frequencies and ambient temperatures is of great importance for many practical applications, where different aspects of the sensor performance need to be considered. In this paper, it is presented that by tuning magnetic nanostructures of the free layers in magnetic tunnel junctions, widedynamic-range or ultra-high-sensitivity tunneling magnetoresistive sensors can be obtained. Tunneling magnetoresistive sensors with a linear response from -75 mT to +75 mT are demonstrated. Also, it is demonstrated that an optimized ultra-high-sensitivity magnetic sensor with a sensitivity of 57,790 %mT can be achieved. This sensitivity is currently the highest among all magnetoresistive sensors that have been reported. The estimated noise of our magnetic sensor is 2.3 pTHz12 at 1 Hz and 190 fTHz12 at 100 Hz respectively. This tunneling magnetoresistive sensor dissipates only 25 μW of power when it operates under an applied voltage of 1 V at room temperature.

KW - Magnetic flux concentrator

KW - Magnetic nanostructure

KW - Magnetic tunnel junction

KW - Multilayer thin film

KW - Tunneling magnetoresistive sensor

KW - Uultra-high sensitivity

KW - Wide dynamic range

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PB - SPIE

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ER -

Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors

Abstract

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Keywords

ASJC Scopus subject areas

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