Chiral sculptured thin films, which contain amorphous silicon screws with a fiberlike fine structure, were grown by ion-beam-assisted glancing-angle deposition at room temperature. The thin films were postgrowth annealed in the temperature range from 400 to 1000°C. Raman spectroscopy and transmission electron microscopy investigations performed before and after sample annealing reveal a recrystallization of silicon at temperatures above 800°C, with a persistence of the chiral structure geometry and fine structure. The Raman results are further discussed in terms of quantum confinement and coexisting phase effects.
ASJC Scopus subject areas
- Physics and Astronomy(all)