Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures

N. Ashkenov, M. Schubert, E. Twerdowski, H. V. Wenckstern, B. N. Mbenkum, H. Hochmuth, M. Lorenz, W. Grill, M. Grundmann

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Electrical and polarization hysteresis measurements on Pt-BaTiO 3-ZnO-Pt heterostructures, grown by pulsed laser deposition on (001)Si, are reported. The layers were deposited without breaking the vacuum using a switchable target holder. Offsets of hysteresis loops along the polarization axis with increasing sweeping voltage, time-dependent charging, and rectifying behavior are observed. A simple electrical circuitry can be used to model the observed hysteresis behavior, where the interface between the wurtzite-structure ZnO and the pervoskite-structure BaTiO3 is seen as the origin of a space charge accumulation region. Coupling between spontaneous wurtzite and switchable ferroelectric polarization is discussed.

Original languageEnglish (US)
Pages (from-to)153-157
Number of pages5
JournalThin Solid Films
Issue number1-2
StatePublished - Aug 22 2005
Externally publishedYes


  • 112 Electrical properties and measurements
  • 143 Ferroelectric properties
  • 354 Oxides
  • 430 Semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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