Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers

V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, M. Schubert

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


The lattice parameters of as-grown hydride vapor phase epitaxy GaN layers on sapphire, free-standing layers after the substrate lift-off, and homoepitaxial layers grown on the free-standing layers are measured. The in-plane and out-of-plane strains are calculated. It is found that the substrate removal leads to strain relaxation in the crack-free GaN free-standing layers to a certain extent. A small increase of the strain in the GaN homoepitaxial layers compared to the free-standing layers is observed. Cathodoluminescence (CL) spectroscopy and imaging, photoluminescence (PL) and Raman measurements are used as complementary tools in the residual strain analysis.

Original languageEnglish (US)
Pages (from-to)516-522
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Issue number3
StatePublished - Feb 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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