Resistive hysteresis and interface charge coupling in BaTiO3 -ZnO heterostructures

V. M. Voora; T. Hofmann; M. Schubert; M. Brandt; M. Lorenz; M. Grundmann; N. Ashkenov; M. Schubert

doi:10.1063/1.3116122

Resistive hysteresis and interface charge coupling in BaTiO₃ -ZnO heterostructures

V. M. Voora, T. Hofmann, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, M. Schubert

Electrical & Computer Engineering

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Abstract

We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO₃ -ZnO heterostructures grown on (001) Si substrates by pulsed laser deposition. We observe a diodelike behavior and cycling-voltage dependent hysteresis formation under forward bias. We explain these effects with depletion layer formation between the ZnO and BaTiO ₃ layers, an additional barrier due to the spontaneous polarization of ZnO and the ferroelectric nature of BaTiO₃. The disappearance of the resistive hysteresis above the ferroelectric-paraelectric phase transition temperature of BaTiO₃ conformed that the hysteresis is related to the ferroelectricity of BaTiO₃. Time dependent resistance measurements reveal memory effects.

Original language	English (US)
Article number	142904
Journal	Applied Physics Letters
Volume	94
Issue number	14
DOIs	https://doi.org/10.1063/1.3116122
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{9e3c273d24fd41d9aecaa4e1f3ed27bc,

title = "Resistive hysteresis and interface charge coupling in BaTiO3 -ZnO heterostructures",

abstract = "We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO3 -ZnO heterostructures grown on (001) Si substrates by pulsed laser deposition. We observe a diodelike behavior and cycling-voltage dependent hysteresis formation under forward bias. We explain these effects with depletion layer formation between the ZnO and BaTiO 3 layers, an additional barrier due to the spontaneous polarization of ZnO and the ferroelectric nature of BaTiO3. The disappearance of the resistive hysteresis above the ferroelectric-paraelectric phase transition temperature of BaTiO3 conformed that the hysteresis is related to the ferroelectricity of BaTiO3. Time dependent resistance measurements reveal memory effects.",

author = "Voora, {V. M.} and T. Hofmann and M. Schubert and M. Brandt and M. Lorenz and M. Grundmann and N. Ashkenov and M. Schubert",

note = "Funding Information: We acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) within the Sonderforschunsgbereich “Functional Oxide Interfaces” (DFG Sonderforschungsbereich 762 “Funktionalit{\"a}t Oxidischer Grenzfl{\"a}chen”), the CoE at UNL, the J. A. Woollam Foundation, and NSF MRSEC QSPIN (Grant No. DMR-0820521).",

year = "2009",

doi = "10.1063/1.3116122",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

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TY - JOUR

T1 - Resistive hysteresis and interface charge coupling in BaTiO3 -ZnO heterostructures

AU - Voora, V. M.

AU - Hofmann, T.

AU - Schubert, M.

AU - Brandt, M.

AU - Lorenz, M.

AU - Grundmann, M.

AU - Ashkenov, N.

AU - Schubert, M.

N1 - Funding Information: We acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) within the Sonderforschunsgbereich “Functional Oxide Interfaces” (DFG Sonderforschungsbereich 762 “Funktionalität Oxidischer Grenzflächen”), the CoE at UNL, the J. A. Woollam Foundation, and NSF MRSEC QSPIN (Grant No. DMR-0820521).

PY - 2009

Y1 - 2009

N2 - We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO3 -ZnO heterostructures grown on (001) Si substrates by pulsed laser deposition. We observe a diodelike behavior and cycling-voltage dependent hysteresis formation under forward bias. We explain these effects with depletion layer formation between the ZnO and BaTiO 3 layers, an additional barrier due to the spontaneous polarization of ZnO and the ferroelectric nature of BaTiO3. The disappearance of the resistive hysteresis above the ferroelectric-paraelectric phase transition temperature of BaTiO3 conformed that the hysteresis is related to the ferroelectricity of BaTiO3. Time dependent resistance measurements reveal memory effects.

AB - We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO3 -ZnO heterostructures grown on (001) Si substrates by pulsed laser deposition. We observe a diodelike behavior and cycling-voltage dependent hysteresis formation under forward bias. We explain these effects with depletion layer formation between the ZnO and BaTiO 3 layers, an additional barrier due to the spontaneous polarization of ZnO and the ferroelectric nature of BaTiO3. The disappearance of the resistive hysteresis above the ferroelectric-paraelectric phase transition temperature of BaTiO3 conformed that the hysteresis is related to the ferroelectricity of BaTiO3. Time dependent resistance measurements reveal memory effects.

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DO - 10.1063/1.3116122

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142904

ER -

Resistive hysteresis and interface charge coupling in BaTiO₃ -ZnO heterostructures

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