Abstract
A 13.56 MHz inductively coupled plasma system has been used to deposit diamond from CH4/O2 in H2, CO in H2’ and CH4/CO2 in H2 plasmas. Depositions were made on substrates of silicon and quartz with surfaces modified by scratching, or coated with Diamond-Like Carbon (DLC), or left unmodified. The C atom to O atom ratio was systematically varied as well as the total concentration. Polycrystalline films, faceted particles and spherical particles were deposited. We found that a C:O ratio of 1:1 with a total concentration between 2% and 3% in hydrogen resulted in large area polycrystalline films for the deposition parameters investigated.
Original language | English (US) |
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Pages (from-to) | 21-27 |
Number of pages | 7 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1146 |
DOIs | |
State | Published - Jan 15 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering