R.F. plasma CVD of diamond from oxygen containing gases

D. E. Meyer, T. B. Kustka, R. O. Dillon, J. A. Woollam

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A 13.56 MHz inductively coupled plasma system has been used to deposit diamond from CH4/O2 in H2, CO in H2’ and CH4/CO2 in H2 plasmas. Depositions were made on substrates of silicon and quartz with surfaces modified by scratching, or coated with Diamond-Like Carbon (DLC), or left unmodified. The C atom to O atom ratio was systematically varied as well as the total concentration. Polycrystalline films, faceted particles and spherical particles were deposited. We found that a C:O ratio of 1:1 with a total concentration between 2% and 3% in hydrogen resulted in large area polycrystalline films for the deposition parameters investigated.

Original languageEnglish (US)
Pages (from-to)21-27
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1146
DOIs
StatePublished - Jan 15 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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