Ripple formation in excimer laser irradiated silicon dioxide I silicon system

J. J. Yuand, Y. F. Lu

Research output: Contribution to journalConference article

Abstract

Excimer laser-induced surface stmctures at the interfaces of Silicon dioxide I Silicon have been investigated experimentally. It is found that a stable, fme and homogeneous ripple structure is preferentially generated under a comparatively larger laser beam. The ripple periodicity seems to have no angular dependence and is enhanced with the increased laser pulses only before the irradiation of certain pulse numbers. The initial substrate temperature also represents an important parameter which can be used to control the interface ripple structures. The correlation between the threshold laser pulse for the ripple formation and laser fluence, the threshold laser pulse and the oxide thickness is studied as well. This study will be helpful in understanding the physics of laser-induced ripple formation by some key parameters, and hence be useful in controlling the ripple structures within the range required for the laser texturing for the high density magnetic recording media.

Original languageEnglish (US)
Pages (from-to)262-268
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3550
DOIs
StatePublished - Aug 15 1998
EventLaser Processing of Materials and Industrial Applications II 1998 - Beijing, China
Duration: Sep 16 1998Sep 19 1998

Keywords

  • Far-uliraviolet radiation
  • Interface
  • Interface structure and mugbness
  • Laser surface modification
  • Micmstructure
  • Silicon-dioxide film
  • Silicon-dioxide i silicon system
  • Surface analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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