Room temperature synthesis of c-AIN thin films by nitrogen-ion-assisted pulsed laser deposition

Z. M. Ren, Y. F. Lu, H. Q. Ni, T. Y.F. Liew, B. A. Cheong, S. K. Chow, M. L. Ng, J. P. Wang

Research output: Contribution to journalArticle

39 Scopus citations

Abstract

Cubic aluminum nitride (c-AIN) thin films have been deposited at room temperature on silicon substrates by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. The deposited thin films exhibit good crystal properties with sharp x-ray diffraction peaks. The influences of the nitrogen ion energy on the morphological, compositional, and electronic properties of the AlN thin films have been studied. The nitrogen ions can effectively promote the formation of Al-N bonds and improve the crystal properties of the deposited thin films. A nitrogen ion energy of 400 eV is proposed to deposit high quality c-AIN thin films.

Original languageEnglish (US)
Pages (from-to)7346-7350
Number of pages5
JournalJournal of Applied Physics
Volume88
Issue number12
DOIs
StatePublished - Dec 15 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Room temperature synthesis of c-AIN thin films by nitrogen-ion-assisted pulsed laser deposition'. Together they form a unique fingerprint.

  • Cite this

    Ren, Z. M., Lu, Y. F., Ni, H. Q., Liew, T. Y. F., Cheong, B. A., Chow, S. K., Ng, M. L., & Wang, J. P. (2000). Room temperature synthesis of c-AIN thin films by nitrogen-ion-assisted pulsed laser deposition. Journal of Applied Physics, 88(12), 7346-7350. https://doi.org/10.1063/1.1320010