Abstract
We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.
Original language | English (US) |
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Article number | 173110 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 17 |
DOIs | |
State | Published - Apr 25 2011 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)