Self-organizing rippled microstructures are induced on silicon surface by linearly polarized femtosecond laser pulses. At a near threshold fluence, it is observed that ripple orientation is co-determined by the laser polarization direction and laser scanning parameters (scanning direction and scanning speed) in surface patterning process. Under fixed laser polarization, the ripple orientation can be controlled to rotate by about 40° through changing laser scanning parameters. In addition, it is also observed that the ripple morphology is sensitive to the laser scanning direction, and it is an optimal choice to obtain ordered ripple structures when the angle between laser scanning and laser polarization is less than 45°.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics