Semi-insulating GaAs made by As implantation and thermal annealing

A. Claverie, F. Namavar, Z. Liliental-Weber, P. Dreszer, E. R. Weber

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We have demonstrated that it is possible to regrow amorphous layers created by high dose As implantation in GaAs by thermal annealing in order to obtain arsenic precipitates distributed in a GaAs matrix similarly to that observed in low temperature GaAs. The characteristics of the As precipitates can be monitored through appropriate selection of the implantation and annealing conditions. Electrical measurements show that dielectric-like resistivity of surface or buried GaAs layers can be obtained by this method. Results on the growth of epilayers on these semi-insulating regions are also reported.

Original languageEnglish (US)
Pages (from-to)37-40
Number of pages4
JournalMaterials Science and Engineering B
Issue number1
StatePublished - Dec 20 1993

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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