Sequential-ion-implantation synthesis of ternary metal silicides

Zhengquan Tan, F. Namavar, S. M. Heald, J. I. Budnick

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


By implanting two different metals in sequence into Si(100), we find that new ternary silicides can by synthesized with simple binary silicide structures. The synthesis of CoSi2-type (Co,Fe)Si2, and CoSi-type (Co,Fe)Si and (Fe,Ni)Si is demonstrated. The structure is largely determined by the first implanted metal and the total dose of the two metals, allowing one to design the structure of the ternary silicide. The two implanted species occupy equivalent positions in the same structure and the metal composition may be continuously varied in a given structure. This opens new possibilities for the synthesis of ternary and multinary compounds and alloys.

Original languageEnglish (US)
Pages (from-to)791-793
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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