Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations

G. R. Hyde; R. O. Dillon; H. A. Beale; I. L. Spain; J. A. Woollam; David J. Sellmyer

doi:10.1016/0038-1098(73)90586-3

Shubnikov-de Haas effects in Bi₂Se₃ with high carrier concentrations

G. R. Hyde, R. O. Dillon, H. A. Beale, I. L. Spain, J. A. Woollam, David J. Sellmyer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi₂Se₃ having a higher carrier density (∼9 × 10²⁵m^-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m₀) found for these carrier concentrations indicates that the band is non-parabolic.

Original language	English (US)
Pages (from-to)	257-263
Number of pages	7
Journal	Solid State Communications
Volume	13
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(73)90586-3
State	Published - Aug 1 1973
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0038-1098(73)90586-3

Cite this

@article{0103347a323a4962b20c77a7e12b683d,

title = "Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations",

abstract = "Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi2Se3 having a higher carrier density (∼9 × 1025m-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m0) found for these carrier concentrations indicates that the band is non-parabolic.",

author = "Hyde, {G. R.} and Dillon, {R. O.} and Beale, {H. A.} and Spain, {I. L.} and Woollam, {J. A.} and Sellmyer, {David J.}",

note = "Funding Information: + Now at Department of Physics, Umversity of Nebraska Lincoln Nebraska. NSF Contract No. GP—21 312. Funding Information: Acknowledgements — Thanks are due to the Center of Materials Research, University of Maryland (administering a grant from the National Science Foundation), for supporting this work and for use of their X-ray and crystal growth facilities. High magnetic field measurements were made at both the National Magnet Laboratory and at the Lewis Research Center. One of us (I.L.S.) also wishes to thank Dr. R. Allgaier for discussions on the interpretation of the Hall constant.",

year = "1973",

month = aug,

day = "1",

doi = "10.1016/0038-1098(73)90586-3",

language = "English (US)",

volume = "13",

pages = "257--263",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations

AU - Hyde, G. R.

AU - Dillon, R. O.

AU - Beale, H. A.

AU - Spain, I. L.

AU - Woollam, J. A.

AU - Sellmyer, David J.

N1 - Funding Information: + Now at Department of Physics, Umversity of Nebraska Lincoln Nebraska. NSF Contract No. GP—21 312. Funding Information: Acknowledgements — Thanks are due to the Center of Materials Research, University of Maryland (administering a grant from the National Science Foundation), for supporting this work and for use of their X-ray and crystal growth facilities. High magnetic field measurements were made at both the National Magnet Laboratory and at the Lewis Research Center. One of us (I.L.S.) also wishes to thank Dr. R. Allgaier for discussions on the interpretation of the Hall constant.

PY - 1973/8/1

Y1 - 1973/8/1

N2 - Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi2Se3 having a higher carrier density (∼9 × 1025m-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m0) found for these carrier concentrations indicates that the band is non-parabolic.

AB - Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi2Se3 having a higher carrier density (∼9 × 1025m-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m0) found for these carrier concentrations indicates that the band is non-parabolic.

UR - http://www.scopus.com/inward/record.url?scp=0015658396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0015658396&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(73)90586-3

DO - 10.1016/0038-1098(73)90586-3

M3 - Article

AN - SCOPUS:0015658396

SN - 0038-1098

VL - 13

SP - 257

EP - 263

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Shubnikov-de Haas effects in Bi₂Se₃ with high carrier concentrations

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this