TY - JOUR
T1 - Silicide structural evolution in high-dose cobalt-implanted Si(100) crystals
AU - Tan, Zheng Quan
AU - Budnick, J. I.
AU - Sanchez, F. H.
AU - Tourillon, G.
AU - Namavar, F.
AU - Hayden, H. C.
PY - 1989
Y1 - 1989
N2 - The silicide structure in high-dose [(18)×1017 Co/cm2] cobalt-implanted Si(100) crystals is studied by extended x-ray-absorption fine structure, x-ray diffraction, and Rutherford backscattering spectrometry. As the implant dose increases we observe silicide structural evolution from a locally ordered CoSi2 at a dose of 1×1017 Co/cm2, to long-range-ordered CoSi2 and CoSi at 3×1017 Co/cm2, and to a short-range-ordered and highly defective CoSi-like structure at 8×1017 Co/cm2. We propose a model in which Co atoms preferentially occupy the interstitial site, first in silicon then in CoSi2, to understand the silicide-formation mechanism in the implanted system. The short-range-ordered silicides, observed for the first time, and the structural evolution are discussed in terms of both the CoSi2 and CoSi structures and the proposed model. Single-phase and strongly oriented CoSi2 are obtained in samples annealed at 700°C.
AB - The silicide structure in high-dose [(18)×1017 Co/cm2] cobalt-implanted Si(100) crystals is studied by extended x-ray-absorption fine structure, x-ray diffraction, and Rutherford backscattering spectrometry. As the implant dose increases we observe silicide structural evolution from a locally ordered CoSi2 at a dose of 1×1017 Co/cm2, to long-range-ordered CoSi2 and CoSi at 3×1017 Co/cm2, and to a short-range-ordered and highly defective CoSi-like structure at 8×1017 Co/cm2. We propose a model in which Co atoms preferentially occupy the interstitial site, first in silicon then in CoSi2, to understand the silicide-formation mechanism in the implanted system. The short-range-ordered silicides, observed for the first time, and the structural evolution are discussed in terms of both the CoSi2 and CoSi structures and the proposed model. Single-phase and strongly oriented CoSi2 are obtained in samples annealed at 700°C.
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U2 - 10.1103/PhysRevB.40.6368
DO - 10.1103/PhysRevB.40.6368
M3 - Article
AN - SCOPUS:33845636170
VL - 40
SP - 6368
EP - 6373
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 9
ER -