Silicide structural evolution in high-dose cobalt-implanted Si(100) crystals

Zheng Quan Tan, J. I. Budnick, F. H. Sanchez, G. Tourillon, F. Namavar, H. C. Hayden

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

The silicide structure in high-dose [(18)×1017 Co/cm2] cobalt-implanted Si(100) crystals is studied by extended x-ray-absorption fine structure, x-ray diffraction, and Rutherford backscattering spectrometry. As the implant dose increases we observe silicide structural evolution from a locally ordered CoSi2 at a dose of 1×1017 Co/cm2, to long-range-ordered CoSi2 and CoSi at 3×1017 Co/cm2, and to a short-range-ordered and highly defective CoSi-like structure at 8×1017 Co/cm2. We propose a model in which Co atoms preferentially occupy the interstitial site, first in silicon then in CoSi2, to understand the silicide-formation mechanism in the implanted system. The short-range-ordered silicides, observed for the first time, and the structural evolution are discussed in terms of both the CoSi2 and CoSi structures and the proposed model. Single-phase and strongly oriented CoSi2 are obtained in samples annealed at 700°C.

Original languageEnglish (US)
Pages (from-to)6368-6373
Number of pages6
JournalPhysical Review B
Volume40
Issue number9
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Tan, Z. Q., Budnick, J. I., Sanchez, F. H., Tourillon, G., Namavar, F., & Hayden, H. C. (1989). Silicide structural evolution in high-dose cobalt-implanted Si(100) crystals. Physical Review B, 40(9), 6368-6373. https://doi.org/10.1103/PhysRevB.40.6368