Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas

X. Y. Chen; Y. F. Lu; Y. H. Wu; B. J. Cho; H. Hu

doi:10.1557/proc-762-a19.2

Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas

X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, H. Hu

Research output: Contribution to journal › Conference article › peer-review

Abstract

We reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O₂ gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 m Torr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiO_x increases with increasing O₂ gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O₂ gas, almost complete SiO ₂ structure is formed. The PL at 1.8-2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiO_x/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.

Original language	English (US)
Pages (from-to)	87-92
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	762
DOIs	https://doi.org/10.1557/proc-762-a19.2
State	Published - 2003
Externally published	Yes
Event	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 25 2003

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{dbad16923a3d4b38aa89c25f248d29e6,

title = "Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas",

abstract = "We reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O2 gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 m Torr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiOx increases with increasing O2 gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O2 gas, almost complete SiO 2 structure is formed. The PL at 1.8-2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiOx/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.",

author = "Chen, {X. Y.} and Lu, {Y. F.} and Wu, {Y. H.} and Cho, {B. J.} and H. Hu",

year = "2003",

doi = "10.1557/proc-762-a19.2",

language = "English (US)",

volume = "762",

pages = "87--92",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 ; Conference date: 22-04-2003 Through 25-04-2003",

}

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T1 - Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas

AU - Chen, X. Y.

AU - Lu, Y. F.

AU - Wu, Y. H.

AU - Cho, B. J.

AU - Hu, H.

PY - 2003

Y1 - 2003

N2 - We reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O2 gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 m Torr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiOx increases with increasing O2 gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O2 gas, almost complete SiO 2 structure is formed. The PL at 1.8-2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiOx/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.

AB - We reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O2 gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 m Torr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiOx increases with increasing O2 gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O2 gas, almost complete SiO 2 structure is formed. The PL at 1.8-2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiOx/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.

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