Silicon nanostructures in Si-based light-emitting devices

Fereydoon Namavar; R. F. Pinizzotto; H. Yang; N. Kalkhoran; P. Maruska

Silicon nanostructures in Si-based light-emitting devices

Fereydoon Namavar, R. F. Pinizzotto, H. Yang, N. Kalkhoran, P. Maruska

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High resolution cross-sectional electron microscopy and electron diffraction of an np heterojunction porous Si device, capable of emitting light at visible wavelengths, clearly indicates the presence of Si nanostructures within the quantum size regime. These results indicate that the quantum confinement effect is at least partially responsible for photoluminescence at visible wavelengths.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Editors	M.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
Publisher	Publ by Materials Research Society
Pages	343-348
Number of pages	6
ISBN (Print)	1558991948
State	Published - 1993
Externally published	Yes
Event	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 14 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	298
ISSN (Print)	0272-9172

Other

Other	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials
City	San Francisco, CA, USA
Period	4/12/93 → 4/14/93

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Namavar, F., Pinizzotto, R. F., Yang, H., Kalkhoran, N., & Maruska, P. (1993). Silicon nanostructures in Si-based light-emitting devices. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (pp. 343-348). (Materials Research Society Symposium Proceedings; Vol. 298). Publ by Materials Research Society.

Silicon nanostructures in Si-based light-emitting devices. / Namavar, Fereydoon; Pinizzotto, R. F.; Yang, H. et al.
Materials Research Society Symposium Proceedings. ed. / M.A. Tischler; R.T. Collins; M.L.W. Thewalt; G. Abstreiter. Publ by Materials Research Society, 1993. p. 343-348 (Materials Research Society Symposium Proceedings; Vol. 298).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Namavar, F, Pinizzotto, RF, Yang, H, Kalkhoran, N & Maruska, P 1993, Silicon nanostructures in Si-based light-emitting devices. in MA Tischler, RT Collins, MLW Thewalt & G Abstreiter (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 298, Publ by Materials Research Society, pp. 343-348, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 4/12/93.

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abstract = "High resolution cross-sectional electron microscopy and electron diffraction of an np heterojunction porous Si device, capable of emitting light at visible wavelengths, clearly indicates the presence of Si nanostructures within the quantum size regime. These results indicate that the quantum confinement effect is at least partially responsible for photoluminescence at visible wavelengths.",

author = "Fereydoon Namavar and Pinizzotto, {R. F.} and H. Yang and N. Kalkhoran and P. Maruska",

year = "1993",

language = "English (US)",

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PY - 1993

Y1 - 1993

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AB - High resolution cross-sectional electron microscopy and electron diffraction of an np heterojunction porous Si device, capable of emitting light at visible wavelengths, clearly indicates the presence of Si nanostructures within the quantum size regime. These results indicate that the quantum confinement effect is at least partially responsible for photoluminescence at visible wavelengths.

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M3 - Conference contribution

AN - SCOPUS:0027849827

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A2 - Tischler, M.A.

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ER -

Silicon nanostructures in Si-based light-emitting devices

Abstract

Publication series

Other

ASJC Scopus subject areas

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