Single-step formation of graphene on dielectric surfaces

Wei Xiong, Yun Shen Zhou, Li Jia Jiang, Amitabha Sarkar, Masoud Mahjouri-Samani, Zhi Qiang Xie, Yang Gao, Natale Joseph Ianno, Lan Jiang, Yong Feng Lu

Research output: Contribution to journalArticle

56 Scopus citations


The direct formation of graphene on various dielectric surfaces is successful via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High-quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range.

Original languageEnglish (US)
Pages (from-to)630-634
Number of pages5
JournalAdvanced Materials
Issue number4
StatePublished - Jan 25 2013



  • Ni C
  • Ni evaporation
  • graphene
  • rapid thermal annealing
  • tansfer-free growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Xiong, W., Zhou, Y. S., Jiang, L. J., Sarkar, A., Mahjouri-Samani, M., Xie, Z. Q., Gao, Y., Ianno, N. J., Jiang, L., & Lu, Y. F. (2013). Single-step formation of graphene on dielectric surfaces. Advanced Materials, 25(4), 630-634.