Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter

Yongbo Yuan; Qingfeng Dong; Bin Yang; Fawen Guo; Qi Zhang; Ming Han; Jinsong Huang

doi:10.1038/srep02707

Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter

Yongbo Yuan, Qingfeng Dong, Bin Yang, Fawen Guo, Qi Zhang, Ming Han, Jinsong Huang

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This "super-float-gating" mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6photons/μm 2 s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.

Original language	English (US)
Article number	2707
Journal	Scientific reports
Volume	3
DOIs	https://doi.org/10.1038/srep02707
State	Published - 2013

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title = "Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter",

abstract = "High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This {"}super-float-gating{"} mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6photons/μm 2 s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.",

author = "Yongbo Yuan and Qingfeng Dong and Bin Yang and Fawen Guo and Qi Zhang and Ming Han and Jinsong Huang",

note = "Funding Information: We thank Prof. Zhenan Bao at Stanford University for providing the semiconducting material 4T-TMS for this work. This work is partially supported by the National Science Foundation (Award No. CMM-1265834), Office of Naval Research (ONR, grant No. N000141210556) and Defense Threat Reduction Agency (DTRA) Young Investigator Award (HDTRA1-10-1-0098).",

year = "2013",

doi = "10.1038/srep02707",

language = "English (US)",

volume = "3",

journal = "Scientific reports",

issn = "2045-2322",

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T1 - Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter

AU - Yuan, Yongbo

AU - Dong, Qingfeng

AU - Yang, Bin

AU - Guo, Fawen

AU - Zhang, Qi

AU - Han, Ming

AU - Huang, Jinsong

N1 - Funding Information: We thank Prof. Zhenan Bao at Stanford University for providing the semiconducting material 4T-TMS for this work. This work is partially supported by the National Science Foundation (Award No. CMM-1265834), Office of Naval Research (ONR, grant No. N000141210556) and Defense Threat Reduction Agency (DTRA) Young Investigator Award (HDTRA1-10-1-0098).

PY - 2013

Y1 - 2013

N2 - High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This "super-float-gating" mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6photons/μm 2 s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.

AB - High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This "super-float-gating" mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6photons/μm 2 s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.

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Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter

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