TY - JOUR
T1 - Spectroscopic ellipsometry studies of HF treated Si (100) surfaces
AU - Yao, Huade
AU - Woollam, John A.
AU - Alterovitz, Samuel A.
PY - 1993
Y1 - 1993
N2 - Both ex situ and in situ spectroscopic ellipsometry (SE) measurements have been employed to investigate the effects of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that after a 20-s 9:1 HF dip without rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed, in an ultrahigh vacuum (UHV) chamber, and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface-layer, after being heated to ∼550°C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.
AB - Both ex situ and in situ spectroscopic ellipsometry (SE) measurements have been employed to investigate the effects of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that after a 20-s 9:1 HF dip without rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed, in an ultrahigh vacuum (UHV) chamber, and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface-layer, after being heated to ∼550°C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.
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U2 - 10.1063/1.109059
DO - 10.1063/1.109059
M3 - Article
AN - SCOPUS:0001650945
SN - 0003-6951
VL - 62
SP - 3324
EP - 3326
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 25
ER -