Spectroscopic ellipsometry studies of HF treated Si (100) surfaces

Huade Yao, John A. Woollam, Samuel A. Alterovitz

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51 Scopus citations

Abstract

Both ex situ and in situ spectroscopic ellipsometry (SE) measurements have been employed to investigate the effects of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that after a 20-s 9:1 HF dip without rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed, in an ultrahigh vacuum (UHV) chamber, and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface-layer, after being heated to ∼550°C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.

Original languageEnglish (US)
Pages (from-to)3324-3326
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number25
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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