Spectroscopic mapping ellipsometry of graphene grown on 3C SiC

Alexander Boosalis; Tino Hofmann; Vanya Darakchieva; Rositza Yakimova; Tom Tiwald; Mathias Schubert

doi:10.1557/opl.2012.457

Spectroscopic mapping ellipsometry of graphene grown on 3C SiC

Alexander Boosalis, Tino Hofmann, Vanya Darakchieva, Rositza Yakimova, Tom Tiwald, Mathias Schubert

Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

Original language	English (US)
Title of host publication	Carbon Nanotubes, Graphene and Related Nanostructures
Pages	47-51
Number of pages	5
DOIs	https://doi.org/10.1557/opl.2012.457
State	Published - 2012
Event	2011 MRS Fall Meeting - Boston, MA, United States Duration: Nov 28 2011 → Dec 2 2011

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1407
ISSN (Print)	0272-9172

Other

Other	2011 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/11 → 12/2/11

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2012.457

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Boosalis, A, Hofmann, T, Darakchieva, V, Yakimova, R, Tiwald, T & Schubert, M 2012, Spectroscopic mapping ellipsometry of graphene grown on 3C SiC. in Carbon Nanotubes, Graphene and Related Nanostructures. Materials Research Society Symposium Proceedings, vol. 1407, pp. 47-51, 2011 MRS Fall Meeting, Boston, MA, United States, 11/28/11. https://doi.org/10.1557/opl.2012.457

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title = "Spectroscopic mapping ellipsometry of graphene grown on 3C SiC",

abstract = "Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.",

author = "Alexander Boosalis and Tino Hofmann and Vanya Darakchieva and Rositza Yakimova and Tom Tiwald and Mathias Schubert",

note = "Funding Information: The authors would like to acknowledge financial support from the Army Research Office (W911NF-09-C-0097), the National Science Foundation (MRSEC DMR-0820521, MRI DMR-0922937, DMR-0907475, ECCS-0846329, and EPS-1004094), the University of Nebraska-Lincoln, and the J.A. Woollam Foundation.; 2011 MRS Fall Meeting ; Conference date: 28-11-2011 Through 02-12-2011",

year = "2012",

doi = "10.1557/opl.2012.457",

language = "English (US)",

isbn = "9781605113845",

series = "Materials Research Society Symposium Proceedings",

pages = "47--51",

booktitle = "Carbon Nanotubes, Graphene and Related Nanostructures",

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T1 - Spectroscopic mapping ellipsometry of graphene grown on 3C SiC

AU - Boosalis, Alexander

AU - Hofmann, Tino

AU - Darakchieva, Vanya

AU - Yakimova, Rositza

AU - Tiwald, Tom

AU - Schubert, Mathias

N1 - Funding Information: The authors would like to acknowledge financial support from the Army Research Office (W911NF-09-C-0097), the National Science Foundation (MRSEC DMR-0820521, MRI DMR-0922937, DMR-0907475, ECCS-0846329, and EPS-1004094), the University of Nebraska-Lincoln, and the J.A. Woollam Foundation.

PY - 2012

Y1 - 2012

N2 - Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

AB - Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

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DO - 10.1557/opl.2012.457

M3 - Conference contribution

AN - SCOPUS:84870307692

SN - 9781605113845

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SP - 47

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BT - Carbon Nanotubes, Graphene and Related Nanostructures

T2 - 2011 MRS Fall Meeting

Y2 - 28 November 2011 through 2 December 2011

ER -

Spectroscopic mapping ellipsometry of graphene grown on 3C SiC

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