Spectroscopic mapping ellipsometry of graphene grown on 3C SiC

Alexander Boosalis, Tino Hofmann, Vanya Darakchieva, Rositza Yakimova, Tom Tiwald, Mathias Schubert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

Original languageEnglish (US)
Title of host publicationCarbon Nanotubes, Graphene and Related Nanostructures
Pages47-51
Number of pages5
DOIs
StatePublished - Dec 5 2012
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 2 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1407
ISSN (Print)0272-9172

Other

Other2011 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/1112/2/11

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Boosalis, A., Hofmann, T., Darakchieva, V., Yakimova, R., Tiwald, T., & Schubert, M. (2012). Spectroscopic mapping ellipsometry of graphene grown on 3C SiC. In Carbon Nanotubes, Graphene and Related Nanostructures (pp. 47-51). (Materials Research Society Symposium Proceedings; Vol. 1407). https://doi.org/10.1557/opl.2012.457