Spin blockade effects in chromium oxide intergrain magnetoresistance

A. Sokolov, C. S. Yang, L. Yuan, S. H. Liou, Ruihua Cheng, B. Xu, C. N. Borca, P. A. Dowben, B. Doudin

Research output: Contribution to journalArticle

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Abstract

CrO 2 thin films with crystallites of a significant size permit investigation of the thin intergrain conduction between a limited numbers of crystals. Phoemission techniques reveal that the CrO 2 films are covered by a 1-2-nm-thick Cr 2O 3 insulating barrier. The electronic band gap of the surface electrons is 3.4 eV at low temperatures, decreases sharply down to 2.8 eV at ambient. Electric transport though a few junctions in series shows a remarkable zero-bias anomaly, interpreted in terms of blockade effects. We show that the magnetoresistance is governed by low-bias blockade in these junctions.

Original languageEnglish (US)
Pages (from-to)8801-8803
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
StatePublished - May 15 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Sokolov, A., Yang, C. S., Yuan, L., Liou, S. H., Cheng, R., Xu, B., Borca, C. N., Dowben, P. A., & Doudin, B. (2002). Spin blockade effects in chromium oxide intergrain magnetoresistance. Journal of Applied Physics, 91(10 I), 8801-8803. https://doi.org/10.1063/1.1452240