Spin correlations and electron transport in MnBi:Au films

P. Kharel; R. Skomski; D. J. Sellmyer

doi:10.1063/1.3537952

Spin correlations and electron transport in MnBi:Au films

P. Kharel, R. Skomski, D. J. Sellmyer

Physics and Astronomy

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Abstract

The structural, magnetic, and electron transport properties of Mn _55-xAu_xBi₄₅ (x = 0, 4.5) thin films prepared by magnetron sputtering have been investigated. The magnetization of the MnBi films decreases and the coercivity increases due to Au doping. The temperature dependence of resistivity between 2 to 300 K shows that the films are metallic but the 4.5 Au-doped film shows a Kondo behavior with resistance minimum at 10.2 K. The magnetoresistance is anisotropic and the positive transverse magnetoresistance is significantly enhanced (16.3 at 70 kOe) by Au doping. We interpret these data in terms of a model in which Au atoms preferentially substitute for Mn atoms on the Mn lattice, and some Mn atoms are displaced to interstitial sites in the NiAs structure. These interstitial Mn atoms are coupled antiferromagnetically to the Mn atoms on the original Mn lattice leading to the large decrease in magnetization, Kondo effect, and the positive magnetoresistance.

Original language	English (US)
Article number	07B709
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3537952
State	Published - Apr 1 2011

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General Physics and Astronomy

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title = "Spin correlations and electron transport in MnBi:Au films",

abstract = "The structural, magnetic, and electron transport properties of Mn 55-xAuxBi45 (x = 0, 4.5) thin films prepared by magnetron sputtering have been investigated. The magnetization of the MnBi films decreases and the coercivity increases due to Au doping. The temperature dependence of resistivity between 2 to 300 K shows that the films are metallic but the 4.5 Au-doped film shows a Kondo behavior with resistance minimum at 10.2 K. The magnetoresistance is anisotropic and the positive transverse magnetoresistance is significantly enhanced (16.3 at 70 kOe) by Au doping. We interpret these data in terms of a model in which Au atoms preferentially substitute for Mn atoms on the Mn lattice, and some Mn atoms are displaced to interstitial sites in the NiAs structure. These interstitial Mn atoms are coupled antiferromagnetically to the Mn atoms on the original Mn lattice leading to the large decrease in magnetization, Kondo effect, and the positive magnetoresistance.",

author = "P. Kharel and R. Skomski and Sellmyer, {D. J.}",

note = "Funding Information: This research was supported by NSF-MRSEC Grant No. DMR-0820521 (R.S.), the DOE Grant No. DE-FG02-04ER46152 (P.K. and D.J.S.), and NCMN.",

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doi = "10.1063/1.3537952",

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T1 - Spin correlations and electron transport in MnBi:Au films

AU - Kharel, P.

AU - Skomski, R.

AU - Sellmyer, D. J.

N1 - Funding Information: This research was supported by NSF-MRSEC Grant No. DMR-0820521 (R.S.), the DOE Grant No. DE-FG02-04ER46152 (P.K. and D.J.S.), and NCMN.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - The structural, magnetic, and electron transport properties of Mn 55-xAuxBi45 (x = 0, 4.5) thin films prepared by magnetron sputtering have been investigated. The magnetization of the MnBi films decreases and the coercivity increases due to Au doping. The temperature dependence of resistivity between 2 to 300 K shows that the films are metallic but the 4.5 Au-doped film shows a Kondo behavior with resistance minimum at 10.2 K. The magnetoresistance is anisotropic and the positive transverse magnetoresistance is significantly enhanced (16.3 at 70 kOe) by Au doping. We interpret these data in terms of a model in which Au atoms preferentially substitute for Mn atoms on the Mn lattice, and some Mn atoms are displaced to interstitial sites in the NiAs structure. These interstitial Mn atoms are coupled antiferromagnetically to the Mn atoms on the original Mn lattice leading to the large decrease in magnetization, Kondo effect, and the positive magnetoresistance.

AB - The structural, magnetic, and electron transport properties of Mn 55-xAuxBi45 (x = 0, 4.5) thin films prepared by magnetron sputtering have been investigated. The magnetization of the MnBi films decreases and the coercivity increases due to Au doping. The temperature dependence of resistivity between 2 to 300 K shows that the films are metallic but the 4.5 Au-doped film shows a Kondo behavior with resistance minimum at 10.2 K. The magnetoresistance is anisotropic and the positive transverse magnetoresistance is significantly enhanced (16.3 at 70 kOe) by Au doping. We interpret these data in terms of a model in which Au atoms preferentially substitute for Mn atoms on the Mn lattice, and some Mn atoms are displaced to interstitial sites in the NiAs structure. These interstitial Mn atoms are coupled antiferromagnetically to the Mn atoms on the original Mn lattice leading to the large decrease in magnetization, Kondo effect, and the positive magnetoresistance.

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Spin correlations and electron transport in MnBi:Au films

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